Inventor
LAI TSUNG-MU
TW33 patents
⚠️ This page may combine multiple inventors who share the name “LAI TSUNG-MU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EMEMORY TECHNOLOGY INC
24 patentsUS9041089B2May 26, 2015
Nonvolatile memory structure
EMEMORY TECHNOLOGY INC15 citations84
US9941011B2Apr 10, 2018
Memory array with one shared deep doped region
EMEMORY TECHNOLOGY INC2 citations83
US10991430B2Apr 27, 2021
Non-volatile memory cell compliant to a near memory computation system
EMEMORY TECHNOLOGY INC2 citations73
US11929434B2Mar 12, 2024
High voltage switch device
EMEMORY TECHNOLOGY INC0 citations62
US11663455B2May 30, 2023
Resistive random-access memory cell and associated cell array structure
EMEMORY TECHNOLOGY INC0 citations62
US11398259B2Jul 26, 2022
Memory cell array of multi-time programmable non-volatile memory
EMEMORY TECHNOLOGY INC1 citations62
US11335805B2May 17, 2022
High voltage switch device
EMEMORY TECHNOLOGY INC0 citations62
US11063772B2Jul 13, 2021
Multi-cell per bit nonvolatile memory unit
EMEMORY TECHNOLOGY INC1 citations62
US9847133B2Dec 19, 2017
Memory array capable of performing byte erase operation
EMEMORY TECHNOLOGY INC1 citations62
US9524785B2Dec 20, 2016
Memory unit with voltage passing device
EMEMORY TECHNOLOGY INC2 citations62
US7965481B2Jun 21, 2011
High voltage tolerance circuit
EMEMORY TECHNOLOGY INC3 citations62
US7872898B2Jan 18, 2011
One time programmable read only memory and programming method thereof
EMEMORY TECHNOLOGY INC3 citations62
US11416416B2Aug 16, 2022
Random code generator with non-volatile memory
EMEMORY TECHNOLOGY INC0 citations61
US10910062B2Feb 2, 2021
Random bit cell with nonvolatile memory cell
EMEMORY TECHNOLOGY INC1 citations61
US11980026B2May 7, 2024
Magnetoresistive random access memory for physically unclonable function technology and associated random code generating method
EMEMORY TECHNOLOGY INC1 citations60
US12063774B2Aug 13, 2024
Forming control method applied to resistive random-access memory cell array
EMEMORY TECHNOLOGY INC0 citations54
US12507420B2Dec 23, 2025
Resistive memory cell and associated cell array structure
EMEMORY TECHNOLOGY INC0 citations52
US12069873B2Aug 20, 2024
Resistive memory cell and associated cell array structure
EMEMORY TECHNOLOGY INC0 citations52
US11062773B2Jul 13, 2021
Near-memory computation system for analog computing
EMEMORY TECHNOLOGY INC0 citations52
US10255980B2Apr 9, 2019
Memory array with one shared deep doped region
EMEMORY TECHNOLOGY INC0 citations51
US12526986B2Jan 13, 2026
Non-volatile memory cell of array structure and associated controlling method
EMEMORY TECHNOLOGY INC0 citations50
US12501620B2Dec 16, 2025
Memory cell of charge-trapping non-volatile memory
EMEMORY TECHNOLOGY INC0 citations50
US12477739B2Nov 18, 2025
Manufacturing method for nonvolatile charge-trapping memory apparatus
EMEMORY TECHNOLOGY INC0 citations50
US12591508B2Mar 31, 2026
Non-volatile memory and associated control method
EMEMORY TECHNOLOGY INC0 citations48
TAIWAN SEMICONDUCTOR MFG
7 patentsUS7295374B2Nov 13, 2007
Micro-lens and micro-lens fabrication method
TAIWAN SEMICONDUCTOR MFG11 citations84
US7255425B2Aug 14, 2007
Ink-channel wafer integrated with CMOS wafer for inkjet printhead and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG8 citations73
US6573188B1Jun 3, 2003
End point detection method for forming a patterned silicon layer
TAIWAN SEMICONDUCTOR MFG12 citations68
US7468327B2Dec 23, 2008
Methods of fabricating a micromechanical structure
TAIWAN SEMICONDUCTOR MFG2 citations62
US7732299B2Jun 8, 2010
Process for wafer bonding
TAIWAN SEMICONDUCTOR MFG6 citations58
US7728396B2Jun 1, 2010
Semiconductor structures
TAIWAN SEMICONDUCTOR MFG0 citations49
US7198975B2Apr 3, 2007
Semiconductor methods and structures
TAIWAN SEMICONDUCTOR MFG0 citations49