P

Inventor

LAI TSUNG-MU

TW33 patents
⚠️ This page may combine multiple inventors who share the name “LAI TSUNG-MU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

EMEMORY TECHNOLOGY INC

24 patents
US9041089B2May 26, 2015

Nonvolatile memory structure

EMEMORY TECHNOLOGY INC15 citations84
US9941011B2Apr 10, 2018

Memory array with one shared deep doped region

EMEMORY TECHNOLOGY INC2 citations83
US10991430B2Apr 27, 2021

Non-volatile memory cell compliant to a near memory computation system

EMEMORY TECHNOLOGY INC2 citations73
US11929434B2Mar 12, 2024

High voltage switch device

EMEMORY TECHNOLOGY INC0 citations62
US11663455B2May 30, 2023

Resistive random-access memory cell and associated cell array structure

EMEMORY TECHNOLOGY INC0 citations62
US11398259B2Jul 26, 2022

Memory cell array of multi-time programmable non-volatile memory

EMEMORY TECHNOLOGY INC1 citations62
US11335805B2May 17, 2022

High voltage switch device

EMEMORY TECHNOLOGY INC0 citations62
US11063772B2Jul 13, 2021

Multi-cell per bit nonvolatile memory unit

EMEMORY TECHNOLOGY INC1 citations62
US9847133B2Dec 19, 2017

Memory array capable of performing byte erase operation

EMEMORY TECHNOLOGY INC1 citations62
US9524785B2Dec 20, 2016

Memory unit with voltage passing device

EMEMORY TECHNOLOGY INC2 citations62
US7965481B2Jun 21, 2011

High voltage tolerance circuit

EMEMORY TECHNOLOGY INC3 citations62
US7872898B2Jan 18, 2011

One time programmable read only memory and programming method thereof

EMEMORY TECHNOLOGY INC3 citations62
US11416416B2Aug 16, 2022

Random code generator with non-volatile memory

EMEMORY TECHNOLOGY INC0 citations61
US10910062B2Feb 2, 2021

Random bit cell with nonvolatile memory cell

EMEMORY TECHNOLOGY INC1 citations61
US11980026B2May 7, 2024

Magnetoresistive random access memory for physically unclonable function technology and associated random code generating method

EMEMORY TECHNOLOGY INC1 citations60
US12063774B2Aug 13, 2024

Forming control method applied to resistive random-access memory cell array

EMEMORY TECHNOLOGY INC0 citations54
US12507420B2Dec 23, 2025

Resistive memory cell and associated cell array structure

EMEMORY TECHNOLOGY INC0 citations52
US12069873B2Aug 20, 2024

Resistive memory cell and associated cell array structure

EMEMORY TECHNOLOGY INC0 citations52
US11062773B2Jul 13, 2021

Near-memory computation system for analog computing

EMEMORY TECHNOLOGY INC0 citations52
US10255980B2Apr 9, 2019

Memory array with one shared deep doped region

EMEMORY TECHNOLOGY INC0 citations51
US12526986B2Jan 13, 2026

Non-volatile memory cell of array structure and associated controlling method

EMEMORY TECHNOLOGY INC0 citations50
US12501620B2Dec 16, 2025

Memory cell of charge-trapping non-volatile memory

EMEMORY TECHNOLOGY INC0 citations50
US12477739B2Nov 18, 2025

Manufacturing method for nonvolatile charge-trapping memory apparatus

EMEMORY TECHNOLOGY INC0 citations50
US12591508B2Mar 31, 2026

Non-volatile memory and associated control method

EMEMORY TECHNOLOGY INC0 citations48

TAIWAN SEMICONDUCTOR MFG

7 patents

LAI TSUNG-MU

1 patent

CHANG CHIA-HUA

1 patent