Inventor
KIM JU-YOUN
KR97 patents
⚠️ This page may combine multiple inventors who share the name “KIM JU-YOUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
40 patentsUS9502416B1Nov 22, 2016
Semiconductor device including transistors having different threshold voltages
SAMSUNG ELECTRONICS CO LTD80 citations98
US9564369B1Feb 7, 2017
Methods of manufacturing semiconductor devices including device isolation processes
SAMSUNG ELECTRONICS CO LTD66 citations95
US9087886B2Jul 21, 2015
Semiconductor device
SAMSUNG ELECTRONICS CO LTD22 citations93
US9698264B2Jul 4, 2017
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD12 citations92
US9515182B2Dec 6, 2016
High-integration semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations92
US9502417B2Nov 22, 2016
Semiconductor device having a substrate including a first active region and a second active region
SAMSUNG ELECTRONICS CO LTD8 citations92
US9461173B2Oct 4, 2016
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations92
US9240411B1Jan 19, 2016
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD14 citations92
US9048219B2Jun 2, 2015
High integration semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US10431673B2Oct 1, 2019
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US10431583B2Oct 1, 2019
Semiconductor device including transistors with adjusted threshold voltages
SAMSUNG ELECTRONICS CO LTD12 citations84
US10084088B2Sep 25, 2018
Method for fabricating a semiconductor device having a first fin active pattern and a second fin active pattern
SAMSUNG ELECTRONICS CO LTD7 citations84
US10068904B2Sep 4, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD10 citations84
US9646967B2May 9, 2017
Semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations84
US9478551B2Oct 25, 2016
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9209184B2Dec 8, 2015
High-integration semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations84
US8987826B2Mar 24, 2015
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations84
US9349731B2May 24, 2016
Method for manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations83
US9214349B2Dec 15, 2015
Method for manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations83
US9614035B2Apr 4, 2017
Semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations82
US9324716B2Apr 26, 2016
Semiconductor device and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD9 citations82
US9064732B2Jun 23, 2015
Semiconductor device including work function control film patterns and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations82
US10930509B2Feb 23, 2021
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10847427B2Nov 24, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations73
US10068901B2Sep 4, 2018
Semiconductor device including transistors with different threshold voltages
SAMSUNG ELECTRONICS CO LTD3 citations73
US10008493B2Jun 26, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9634118B2Apr 25, 2017
Methods of forming semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations73
US9589957B2Mar 7, 2017
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations73
US9305922B2Apr 5, 2016
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9640534B2May 2, 2017
Semiconductor device having high-k film and metal gate
SAMSUNG ELECTRONICS CO LTD4 citations72
US10910376B2Feb 2, 2021
Semiconductor devices including diffusion break regions
SAMSUNG ELECTRONICS CO LTD4 citations71
US10804265B2Oct 13, 2020
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10014208B2Jul 3, 2018
Semiconductor device having a device isolation layer
SAMSUNG ELECTRONICS CO LTD3 citations71
US11784186B2Oct 10, 2023
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US11380687B2Jul 5, 2022
Semiconductor devices including diffusion break regions
SAMSUNG ELECTRONICS CO LTD2 citations70
US11101269B2Aug 24, 2021
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations70
US10692781B2Jun 23, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations70
US11462613B2Oct 4, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations69
US9312188B2Apr 12, 2016
Method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations69
US12414364B2Sep 9, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations63
KIM JU-YOUN
5 patentsUS8969878B2Mar 3, 2015
Semiconductor device and method for manufacturing the device
KIM JU-YOUN19 citations92
US8772146B2Jul 8, 2014
Semiconductor device and method for fabricating the same
KIM JU-YOUN8 citations83
US9536878B2Jan 3, 2017
Semiconductor devices and fabricating methods thereof
KIM JU-YOUN4 citations73
US9831244B2Nov 28, 2017
Method for manufacturing a semiconductor device
KIM JU-YOUN3 citations71
US9721952B2Aug 1, 2017
Semiconductor devices having gate patterns in trenches with widened openings
KIM JU-YOUN4 citations70
TSENG WEI-HSIUNG
2 patentsKIM JU YOUN
2 patentsUS8772165B2Jul 8, 2014
Methods of manufacturing gates for preventing shorts between the gates and self-aligned contacts and semiconductor devices having the same
KIM JU YOUN10 citations81
US8685827B2Apr 1, 2014
Method of forming polysilicon resistor during replacement metal gate process and semiconductor device having same
KIM JU YOUN8 citations81
ST MICROELECTRONICS INC
1 patentShowing the top 50 of 97 patents by PatentIndex Score.