Inventor
CHIANG WEN-CHUAN
TW49 patents
⚠️ This page may combine multiple inventors who share the name “CHIANG WEN-CHUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
34 patentsUS7564105B2Jul 21, 2009
Quasi-plannar and FinFET-like transistors on bulk silicon
TAIWAN SEMICONDUCTOR MFG138 citations98
US6143604ANov 7, 2000
Method for fabricating small-size two-step contacts for word-line strapping on dynamic random access memory (DRAM)
TAIWAN SEMICONDUCTOR MFG252 citations98
US6080637AJun 27, 2000
Shallow trench isolation technology to eliminate a kink effect
TAIWAN SEMICONDUCTOR MFG88 citations98
US6168984B1Jan 2, 2001
Reduction of the aspect ratio of deep contact holes for embedded DRAM devices
TAIWAN SEMICONDUCTOR MFG61 citations96
US6420226B1Jul 16, 2002
Method of defining a buried stack capacitor structure for a one transistor RAM cell
TAIWAN SEMICONDUCTOR MFG38 citations93
US6271125B1Aug 7, 2001
Method to reduce contact hole aspect ratio for embedded DRAM arrays and logic devices, via the use of a tungsten bit line structure
TAIWAN SEMICONDUCTOR MFG42 citations93
US6194234B1Feb 27, 2001
Method to evaluate hemisperical grain (HSG) polysilicon surface
TAIWAN SEMICONDUCTOR MFG23 citations93
US6177340B1Jan 23, 2001
Method to reduce contact hole aspect ratio for embedded DRAM arrays and logic devices, via the use of a tungsten bit line structure
TAIWAN SEMICONDUCTOR MFG39 citations93
US6165839ADec 26, 2000
Process to fabricate a cylindrical, capacitor structure under a bit line structure for a dynamic random access memory cell
TAIWAN SEMICONDUCTOR MFG53 citations93
US6103455AAug 15, 2000
Method to form a recess free deep contact
TAIWAN SEMICONDUCTOR MFG22 citations93
US5968278AOct 19, 1999
High aspect ratio contact
TAIWAN SEMICONDUCTOR MFG19 citations93
US6638813B1Oct 28, 2003
Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cell
TAIWAN SEMICONDUCTOR MFG33 citations92
US6403416B1Jun 11, 2002
Method for making a double-cylinder-capacitor structure for dynamic random access memory (DRAM)
TAIWAN SEMICONDUCTOR MFG29 citations92
US6287939B1Sep 11, 2001
Method for fabricating a shallow trench isolation which is not susceptible to buried contact trench formation
TAIWAN SEMICONDUCTOR MFG25 citations92
US6214715B1Apr 10, 2001
Method for fabricating a self aligned contact which eliminates the key hole problem using a two step spacer deposition
TAIWAN SEMICONDUCTOR MFG37 citations92
US6168989B1Jan 2, 2001
Process for making new and improved crown-shaped capacitors on dynamic random access memory cells
TAIWAN SEMICONDUCTOR MFG33 citations92
US5922515AJul 13, 1999
Approaches to integrate the deep contact module
TAIWAN SEMICONDUCTOR MFG20 citations92
US7091543B2Aug 15, 2006
Embedded dual-port DRAM process
TAIWAN SEMICONDUCTOR MFG38 citations91
US6661043B1Dec 9, 2003
One-transistor RAM approach for high density memory application
TAIWAN SEMICONDUCTOR MFG27 citations89
US6227211B1May 8, 2001
Uniformity improvement of high aspect ratio contact by stop layer
TAIWAN SEMICONDUCTOR MFG23 citations87
US8759193B2Jun 24, 2014
Method of fabricating semiconductor device
TAIWAN SEMICONDUCTOR MFG6 citations84
US6187659B1Feb 13, 2001
Node process integration technology to improve data retention for logic based embedded dram
TAIWAN SEMICONDUCTOR MFG17 citations84
US7994040B2Aug 9, 2011
Semiconductor device and fabrication thereof
TAIWAN SEMICONDUCTOR MFG11 citations80
US6376294B1Apr 23, 2002
Method to define poly dog-bone for word line strapping contact at stitch area in embedded DRAM process
TAIWAN SEMICONDUCTOR MFG10 citations74
US6174802B1Jan 16, 2001
Method for fabricating a self aligned contact which eliminates the key hole problem using a two step contact deposition
TAIWAN SEMICONDUCTOR MFG7 citations74
US6020236AFeb 1, 2000
Method to form capacitance node contacts with improved isolation in a DRAM process
TAIWAN SEMICONDUCTOR MFG15 citations74
US9269760B2Feb 23, 2016
Method of fabricating semiconductor device
TAIWAN SEMICONDUCTOR MFG3 citations73
US6794254B1Sep 21, 2004
Embedded dual-port DRAM process
TAIWAN SEMICONDUCTOR MFG10 citations72
US8969937B2Mar 3, 2015
Semiconductor device
TAIWAN SEMICONDUCTOR MFG3 citations63
US6235580B1May 22, 2001
Process for forming a crown shaped capacitor structure for a DRAM device
TAIWAN SEMICONDUCTOR MFG6 citations63
US7633110B2Dec 15, 2009
Memory cell
TAIWAN SEMICONDUCTOR MFG6 citations62
US7371634B2May 13, 2008
Amorphous carbon contact film for contact hole etch process
TAIWAN SEMICONDUCTOR MFG5 citations62
US6306767B1Oct 23, 2001
Self-aligned etching method for forming high areal density patterned microelectronic structures
TAIWAN SEMICONDUCTOR MFG2 citations62
US7482278B1Jan 27, 2009
Key-hole free process for high aspect ratio gap filling with reentrant spacer
TAIWAN SEMICONDUCTOR MFG2 citations60
TAIWAN SEMICONDUCTOR MFG CO LTD
10 patentsUS9391016B2Jul 12, 2016
MIM capacitor structure
TAIWAN SEMICONDUCTOR MFG CO LTD30 citations92
US9368392B2Jun 14, 2016
MIM capacitor structure
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations82
US9219110B2Dec 22, 2015
MIM capacitor structure
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations82
US10847606B2Nov 24, 2020
Capacitor and method for making same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9614025B2Apr 4, 2017
Method of fabricating semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9553095B2Jan 24, 2017
Capacitor and method for making same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9793212B2Oct 17, 2017
Interconnect structures and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US9728597B2Aug 8, 2017
Metal-insulator-metal structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US10157976B2Dec 18, 2018
Capacitor and method for making same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9425247B2Aug 23, 2016
Metal-insulator-metal capacitor with current leakage protection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52