P

Inventor

WANG HONGMEI

US72 patents
⚠️ This page may combine multiple inventors who share the name “WANG HONGMEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

39 patents
US7224020B2May 29, 2007

Integrated circuit device having non-linear active area pillars

MICRON TECHNOLOGY INC57 citations96
US6812103B2Nov 2, 2004

Methods of fabricating a dielectric plug in MOSFETS to suppress short-channel effects

MICRON TECHNOLOGY INC68 citations96
US10269442B1Apr 23, 2019

Drift mitigation with embedded refresh

MICRON TECHNOLOGY INC26 citations94
US7253493B2Aug 7, 2007

High density access transistor having increased channel width and methods of fabricating such devices

MICRON TECHNOLOGY INC25 citations93
US7230343B2Jun 12, 2007

High density memory array having increased channel widths

MICRON TECHNOLOGY INC12 citations93
US7189606B2Mar 13, 2007

Method of forming fully-depleted (FD) SOI MOSFET access transistor

MICRON TECHNOLOGY INC25 citations93
US6977419B2Dec 20, 2005

MOSFETs including a dielectric plug to suppress short-channel effects

MICRON TECHNOLOGY INC14 citations93
US7638392B2Dec 29, 2009

Methods of forming capacitor structures

MICRON TECHNOLOGY INC23 citations92
US7442600B2Oct 28, 2008

Methods of forming threshold voltage implant regions

MICRON TECHNOLOGY INC23 citations92
US7440255B2Oct 21, 2008

Capacitor constructions and methods of forming

MICRON TECHNOLOGY INC20 citations92
US11139034B1Oct 5, 2021

Data-based polarity write operations

MICRON TECHNOLOGY INC11 citations86
US9171863B2Oct 27, 2015

Methods and apparatuses including strings of memory cells formed along levels of semiconductor material

MICRON TECHNOLOGY INC10 citations84
US7935602B2May 3, 2011

Semiconductor processing methods

MICRON TECHNOLOGY INC15 citations84
US7154146B2Dec 26, 2006

Dielectric plug in mosfets to suppress short-channel effects

MICRON TECHNOLOGY INC12 citations84
US7667234B2Feb 23, 2010

High density memory array having increased channel widths

MICRON TECHNOLOGY INC6 citations74
US7151303B2Dec 19, 2006

Fully-depleted (FD) (SOI) MOSFET access transistor

MICRON TECHNOLOGY INC6 citations74
US11217322B2Jan 4, 2022

Drift mitigation with embedded refresh

MICRON TECHNOLOGY INC1 citations73
US11100986B2Aug 24, 2021

Discharge current mitigation in a memory array

MICRON TECHNOLOGY INC6 citations73
US10910438B2Feb 2, 2021

Memory array with graded memory stack resistances

MICRON TECHNOLOGY INC4 citations73
US10777291B2Sep 15, 2020

Drift mitigation with embedded refresh

MICRON TECHNOLOGY INC1 citations73
US11244717B2Feb 8, 2022

Write operation techniques for memory systems

MICRON TECHNOLOGY INC4 citations72
US10672500B2Jun 2, 2020

Non-contact measurement of memory cell threshold voltage

MICRON TECHNOLOGY INC2 citations71
US10650891B2May 12, 2020

Non-contact electron beam probing techniques and related structures

MICRON TECHNOLOGY INC3 citations71
US10403359B2Sep 3, 2019

Non-contact electron beam probing techniques and related structures

MICRON TECHNOLOGY INC2 citations71
US10930345B1Feb 23, 2021

Voltage profile for reduction of read disturb in memory cells

MICRON TECHNOLOGY INC2 citations69
US10748615B2Aug 18, 2020

Polarity-conditioned memory cell write operations

MICRON TECHNOLOGY INC2 citations68
US10354729B1Jul 16, 2019

Polarity-conditioned memory cell write operations

MICRON TECHNOLOGY INC2 citations68
US11538860B2Dec 27, 2022

Memory array with graded memory stack resistances

MICRON TECHNOLOGY INC0 citations63
US7517743B2Apr 14, 2009

Fully-depleted (FD) (SOI) MOSFET access transistor and method of fabrication

MICRON TECHNOLOGY INC2 citations63
US7465999B2Dec 16, 2008

Fully-depleted (FD) (SOI) MOSFET access transistor

MICRON TECHNOLOGY INC2 citations63
US7332767B2Feb 19, 2008

High density memory devices having improved channel widths and cell size

MICRON TECHNOLOGY INC3 citations63
US12020745B2Jun 25, 2024

Memory array architecture having sensing circuitry to drive two matrices for higher array efficiency

MICRON TECHNOLOGY INC0 citations62
US11776625B2Oct 3, 2023

Boost-assisted memory cell selection in a memory array

MICRON TECHNOLOGY INC0 citations62
US11710528B2Jul 25, 2023

Data-based polarity write operations

MICRON TECHNOLOGY INC0 citations62
US11710517B2Jul 25, 2023

Write operation techniques for memory systems

MICRON TECHNOLOGY INC0 citations62
US11651825B2May 16, 2023

Random value generator

MICRON TECHNOLOGY INC0 citations62
US11587635B2Feb 21, 2023

Selective inhibition of memory

MICRON TECHNOLOGY INC0 citations62
US11430518B1Aug 30, 2022

Conditional drift cancellation operations in programming memory cells to store data

MICRON TECHNOLOGY INC0 citations62
US11417375B2Aug 16, 2022

Discharge current mitigation in a memory array

MICRON TECHNOLOGY INC0 citations61

EMC CORP

2 patents

ZHANG JIANPING

2 patents

INTEL CORP

2 patents

BOLB INC

1 patent

WANG HONGMEI

1 patent

SARPATWARI KARTHIK

1 patent

GOERTEK INC

1 patent

HOOKER RICHARD A

1 patent

Showing the top 50 of 72 patents by PatentIndex Score.