Inventor
WANG HONGMEI
US72 patents
⚠️ This page may combine multiple inventors who share the name “WANG HONGMEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
39 patentsUS7224020B2May 29, 2007
Integrated circuit device having non-linear active area pillars
MICRON TECHNOLOGY INC57 citations96
US6812103B2Nov 2, 2004
Methods of fabricating a dielectric plug in MOSFETS to suppress short-channel effects
MICRON TECHNOLOGY INC68 citations96
US10269442B1Apr 23, 2019
Drift mitigation with embedded refresh
MICRON TECHNOLOGY INC26 citations94
US7253493B2Aug 7, 2007
High density access transistor having increased channel width and methods of fabricating such devices
MICRON TECHNOLOGY INC25 citations93
US7230343B2Jun 12, 2007
High density memory array having increased channel widths
MICRON TECHNOLOGY INC12 citations93
US7189606B2Mar 13, 2007
Method of forming fully-depleted (FD) SOI MOSFET access transistor
MICRON TECHNOLOGY INC25 citations93
US6977419B2Dec 20, 2005
MOSFETs including a dielectric plug to suppress short-channel effects
MICRON TECHNOLOGY INC14 citations93
US7638392B2Dec 29, 2009
Methods of forming capacitor structures
MICRON TECHNOLOGY INC23 citations92
US7442600B2Oct 28, 2008
Methods of forming threshold voltage implant regions
MICRON TECHNOLOGY INC23 citations92
US7440255B2Oct 21, 2008
Capacitor constructions and methods of forming
MICRON TECHNOLOGY INC20 citations92
US11139034B1Oct 5, 2021
Data-based polarity write operations
MICRON TECHNOLOGY INC11 citations86
US9171863B2Oct 27, 2015
Methods and apparatuses including strings of memory cells formed along levels of semiconductor material
MICRON TECHNOLOGY INC10 citations84
US7935602B2May 3, 2011
Semiconductor processing methods
MICRON TECHNOLOGY INC15 citations84
US7154146B2Dec 26, 2006
Dielectric plug in mosfets to suppress short-channel effects
MICRON TECHNOLOGY INC12 citations84
US7667234B2Feb 23, 2010
High density memory array having increased channel widths
MICRON TECHNOLOGY INC6 citations74
US7151303B2Dec 19, 2006
Fully-depleted (FD) (SOI) MOSFET access transistor
MICRON TECHNOLOGY INC6 citations74
US11217322B2Jan 4, 2022
Drift mitigation with embedded refresh
MICRON TECHNOLOGY INC1 citations73
US11100986B2Aug 24, 2021
Discharge current mitigation in a memory array
MICRON TECHNOLOGY INC6 citations73
US10910438B2Feb 2, 2021
Memory array with graded memory stack resistances
MICRON TECHNOLOGY INC4 citations73
US10777291B2Sep 15, 2020
Drift mitigation with embedded refresh
MICRON TECHNOLOGY INC1 citations73
US11244717B2Feb 8, 2022
Write operation techniques for memory systems
MICRON TECHNOLOGY INC4 citations72
US10672500B2Jun 2, 2020
Non-contact measurement of memory cell threshold voltage
MICRON TECHNOLOGY INC2 citations71
US10650891B2May 12, 2020
Non-contact electron beam probing techniques and related structures
MICRON TECHNOLOGY INC3 citations71
US10403359B2Sep 3, 2019
Non-contact electron beam probing techniques and related structures
MICRON TECHNOLOGY INC2 citations71
US10930345B1Feb 23, 2021
Voltage profile for reduction of read disturb in memory cells
MICRON TECHNOLOGY INC2 citations69
US10748615B2Aug 18, 2020
Polarity-conditioned memory cell write operations
MICRON TECHNOLOGY INC2 citations68
US10354729B1Jul 16, 2019
Polarity-conditioned memory cell write operations
MICRON TECHNOLOGY INC2 citations68
US11538860B2Dec 27, 2022
Memory array with graded memory stack resistances
MICRON TECHNOLOGY INC0 citations63
US7517743B2Apr 14, 2009
Fully-depleted (FD) (SOI) MOSFET access transistor and method of fabrication
MICRON TECHNOLOGY INC2 citations63
US7465999B2Dec 16, 2008
Fully-depleted (FD) (SOI) MOSFET access transistor
MICRON TECHNOLOGY INC2 citations63
US7332767B2Feb 19, 2008
High density memory devices having improved channel widths and cell size
MICRON TECHNOLOGY INC3 citations63
US12020745B2Jun 25, 2024
Memory array architecture having sensing circuitry to drive two matrices for higher array efficiency
MICRON TECHNOLOGY INC0 citations62
US11776625B2Oct 3, 2023
Boost-assisted memory cell selection in a memory array
MICRON TECHNOLOGY INC0 citations62
US11710528B2Jul 25, 2023
Data-based polarity write operations
MICRON TECHNOLOGY INC0 citations62
US11710517B2Jul 25, 2023
Write operation techniques for memory systems
MICRON TECHNOLOGY INC0 citations62
US11651825B2May 16, 2023
Random value generator
MICRON TECHNOLOGY INC0 citations62
US11587635B2Feb 21, 2023
Selective inhibition of memory
MICRON TECHNOLOGY INC0 citations62
US11430518B1Aug 30, 2022
Conditional drift cancellation operations in programming memory cells to store data
MICRON TECHNOLOGY INC0 citations62
US11417375B2Aug 16, 2022
Discharge current mitigation in a memory array
MICRON TECHNOLOGY INC0 citations61
EMC CORP
2 patentsZHANG JIANPING
2 patentsUS8723159B2May 13, 2014
Defect-controlling structure for epitaxial growth, light emitting device containing defect-controlling structure, and method of forming the same
ZHANG JIANPING4 citations72
US8785904B2Jul 22, 2014
Light-emitting device with low forward voltage and method for fabricating the same
ZHANG JIANPING3 citations62
INTEL CORP
2 patentsBOLB INC
1 patentWANG HONGMEI
1 patentSARPATWARI KARTHIK
1 patentGOERTEK INC
1 patentHOOKER RICHARD A
1 patentShowing the top 50 of 72 patents by PatentIndex Score.