Inventor
ZHU THEODORE
US54 patents
⚠️ This page may combine multiple inventors who share the name “ZHU THEODORE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
35 patentsUS8004882B2Aug 23, 2011
Spintronic devices with integrated transistors
MICRON TECHNOLOGY INC109 citations99
US6538918B2Mar 25, 2003
Pulsed write techniques for magneto-resistive memories
MICRON TECHNOLOGY INC110 citations99
US6887719B2May 3, 2005
Magnetoresistive random access memory (MRAM) cell patterning
MICRON TECHNOLOGY INC94 citations98
US6677165B1Jan 13, 2004
Magnetoresistive random access memory (MRAM) cell patterning
MICRON TECHNOLOGY INC97 citations98
US6424561B1Jul 23, 2002
MRAM architecture using offset bits for increased write selectivity
MICRON TECHNOLOGY INC56 citations96
US6392922B1May 21, 2002
Passivated magneto-resistive bit structure and passivation method therefor
MICRON TECHNOLOGY INC59 citations96
US6522576B2Feb 18, 2003
Magneto-resistive memory array
MICRON TECHNOLOGY INC20 citations93
US6493258B1Dec 10, 2002
Magneto-resistive memory array
MICRON TECHNOLOGY INC28 citations93
US7166479B2Jan 23, 2007
Methods of forming magnetic shielding for a thin-film memory element
MICRON TECHNOLOGY INC24 citations92
US6806546B2Oct 19, 2004
Passivated magneto-resistive bit structure
MICRON TECHNOLOGY INC30 citations92
US6765823B1Jul 20, 2004
Magnetic memory cell with shape anisotropy
MICRON TECHNOLOGY INC36 citations92
US6724654B1Apr 20, 2004
Pulsed write techniques for magneto-resistive memories
MICRON TECHNOLOGY INC25 citations92
US6717194B2Apr 6, 2004
Magneto-resistive bit structure and method of manufacture therefor
MICRON TECHNOLOGY INC18 citations92
US6671834B1Dec 30, 2003
Memory redundancy with programmable non-volatile control
MICRON TECHNOLOGY INC14 citations92
US6522574B2Feb 18, 2003
MRAM architectures for increased write selectivity
MICRON TECHNOLOGY INC13 citations92
US6493259B1Dec 10, 2002
Pulse write techniques for magneto-resistive memories
MICRON TECHNOLOGY INC32 citations92
US7339818B2Mar 4, 2008
Spintronic devices with integrated transistors
MICRON TECHNOLOGY INC9 citations84
US6735112B2May 11, 2004
Magneto-resistive memory cell structures with improved selectivity
MICRON TECHNOLOGY INC13 citations84
US6872993B1Mar 29, 2005
Thin film memory device having local and external magnetic shielding
MICRON TECHNOLOGY INC15 citations83
US6424564B2Jul 23, 2002
MRAM architectures for increased write selectivity
MICRON TECHNOLOGY INC11 citations82
US6862700B2Mar 1, 2005
Memory redundancy with programmable non-volatile control
MICRON TECHNOLOGY INC11 citations81
US6765820B2Jul 20, 2004
Magneto-resistive memory array
MICRON TECHNOLOGY INC5 citations74
US6532168B1Mar 11, 2003
Pulsed write techniques for magneto-resistive memories
MICRON TECHNOLOGY INC10 citations74
US7389451B2Jun 17, 2008
Memory redundancy with programmable control
MICRON TECHNOLOGY INC4 citations73
US7200035B2Apr 3, 2007
Magneto-resistive memory cell structures with improved selectivity
MICRON TECHNOLOGY INC6 citations73
US7038940B2May 2, 2006
Pulsed write techniques for magneto-resistive memories
MICRON TECHNOLOGY INC10 citations73
US6992918B2Jan 31, 2006
Methods of increasing write selectivity in an MRAM
MICRON TECHNOLOGY INC3 citations73
US6920064B2Jul 19, 2005
Magneto-resistive memory cell structures with improved selectivity
MICRON TECHNOLOGY INC9 citations73
US6906950B2Jun 14, 2005
Magneto-resistive memory cell with shape anistropy and memory device thereof
MICRON TECHNOLOGY INC6 citations73
US6872997B2Mar 29, 2005
Method for manufacture of magneto-resistive bit structure
MICRON TECHNOLOGY INC8 citations73
US6850431B2Feb 1, 2005
Pulsed write techniques for magneto-resistive memories
MICRON TECHNOLOGY INC5 citations73
US6791856B2Sep 14, 2004
Methods of increasing write selectivity in an MRAM
MICRON TECHNOLOGY INC4 citations73
US6623987B2Sep 23, 2003
Passivated magneto-resistive bit structure and passivation method therefor
MICRON TECHNOLOGY INC6 citations73
US7208323B2Apr 24, 2007
Method for forming magneto-resistive memory cells with shape anisotropy
MICRON TECHNOLOGY INC1 citations62
US7029923B2Apr 18, 2006
Method for manufacture of magneto-resistive bit structure
MICRON TECHNOLOGY INC4 citations62
MOTOROLA INC
10 patentsUS6174737B1Jan 16, 2001
Magnetic random access memory and fabricating method thereof
MOTOROLA INC270 citations99
US5940319AAug 17, 1999
Magnetic random access memory and fabricating method thereof
MOTOROLA INC313 citations99
US5930164AJul 27, 1999
Magnetic memory unit having four states and operating method thereof
MOTOROLA INC167 citations99
US5902690AMay 11, 1999
Stray magnetic shielding for a non-volatile MRAM
MOTOROLA INC149 citations99
US5838608ANov 17, 1998
Multi-layer magnetic random access memory and method for fabricating thereof
MOTOROLA INC121 citations98
US5768181AJun 16, 1998
Magnetic device having multi-layer with insulating and conductive layers
MOTOROLA INC121 citations98
US6211559B1Apr 3, 2001
Symmetric magnetic tunnel device
MOTOROLA INC63 citations96
US6081445AJun 27, 2000
Method to write/read MRAM arrays
MOTOROLA INC56 citations96
US5959880ASep 28, 1999
Low aspect ratio magnetoresistive tunneling junction
MOTOROLA INC72 citations96
US5757695AMay 26, 1998
Mram with aligned magnetic vectors
MOTOROLA INC72 citations96
KATTI ROMNEY R
2 patentsHONEYWELL INC
2 patentsIOTELLIGENT TECH LTD INC
1 patentShowing the top 50 of 54 patents by PatentIndex Score.