Inventor
CHENG JYE-YEN
TW37 patents
⚠️ This page may combine multiple inventors who share the name “CHENG JYE-YEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
27 patentsUS9397045B2Jul 19, 2016
Structure and formation method of damascene structure
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations92
US9653348B1May 16, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD23 citations91
US10475703B2Nov 12, 2019
Structure and formation method of damascene structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11424188B2Aug 23, 2022
Methods of fabricating integrated circuit devices having raised via contacts
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10840189B2Nov 17, 2020
Integrated circuit devices having raised via contacts and methods of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9793212B2Oct 17, 2017
Interconnect structures and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11081445B2Aug 3, 2021
Semiconductor device comprising air gaps having different configurations
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10879179B2Dec 29, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10157843B2Dec 18, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9852992B2Dec 26, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9881870B2Jan 30, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US10522396B1Dec 31, 2019
Methods of fabricating integrated circuit devices having reduced line end spaces
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations67
US12243826B2Mar 4, 2025
Method for manufacturing semiconductor structure having raised via contacts
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11676895B2Jun 13, 2023
Semiconductor device comprising air gaps having different configurations
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10521537B2Dec 31, 2019
Method and system of generating layout
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11355436B2Jun 7, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11348828B2May 31, 2022
Interconnect structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US10872806B2Dec 22, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10847418B2Nov 24, 2020
Formation method of damascene structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10170355B2Jan 1, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9721836B2Aug 1, 2017
Structure and formation method of damascene structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9711391B1Jul 18, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10102972B2Oct 16, 2018
Method of forming capacitor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9437485B2Sep 6, 2016
Method for line stress reduction through dummy shoulder structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10068836B2Sep 4, 2018
Metal gate transistor, integrated circuits, systems, and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9892221B2Feb 13, 2018
Method and system of generating a layout including a fuse layout pattern
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations48
US10361156B2Jul 23, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47
TAIWAN SEMICONDUCTOR MFG
3 patentsUS7880303B2Feb 1, 2011
Stacked contact with low aspect ratio
TAIWAN SEMICONDUCTOR MFG16 citations92
US6577149B2Jun 10, 2003
Method and device for addressable failure site test structure
TAIWAN SEMICONDUCTOR MFG27 citations88
US7135406B2Nov 14, 2006
Method for damascene formation using plug materials having varied etching rates
TAIWAN SEMICONDUCTOR MFG4 citations60