Inventor
ASANO MASAMICHI
JP92 patents
⚠️ This page may combine multiple inventors who share the name “ASANO MASAMICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
39 patentsUS5297029AMar 22, 1994
Semiconductor memory device
TOSHIBA KK204 citations99
US5361227ANov 1, 1994
Non-volatile semiconductor memory device and memory system using the same
TOSHIBA KK103 citations97
US6172911B1Jan 9, 2001
Non-volatile semiconductor memory device with an improved verify voltage generator
TOSHIBA KK54 citations96
US5909399AJun 1, 1999
Non-volatile semiconductor memory device and memory system using the same
TOSHIBA KK26 citations96
US5793696AAug 11, 1998
Non-volatile semiconductor memory device and memory system using the same
TOSHIBA KK27 citations96
US5724300AMar 3, 1998
Non-volatile semiconductor memory device and memory system using the same
TOSHIBA KK50 citations96
US5615165AMar 25, 1997
Non-volatile semiconductor memory device and memory system using the same
TOSHIBA KK43 citations96
US5546351AAug 13, 1996
Non-volatile semiconductor memory device and memory system using the same
TOSHIBA KK65 citations96
US5428569AJun 27, 1995
Non-volatile semiconductor memory device
TOSHIBA KK92 citations96
US5371702ADec 6, 1994
Block erasable nonvolatile memory device
TOSHIBA KK89 citations96
US5095461AMar 10, 1992
Erase circuitry for a non-volatile semiconductor memory device
TOSHIBA KK61 citations96
US4799195AJan 17, 1989
Semiconductor memory device with a sense amplifier
TOSHIBA KK120 citations96
US4794562ADec 27, 1988
Electrically-erasable/programmable nonvolatile semiconductor memory device
TOSHIBA KK75 citations96
US5053841AOct 1, 1991
Nonvolatile semiconductor memory
TOSHIBA KK66 citations95
US4916334AApr 10, 1990
High voltage booster circuit for use in EEPROMs
TOSHIBA KK106 citations95
US4819212AApr 4, 1989
Nonvolatile semiconductor memory device with readout test circuitry
TOSHIBA KK84 citations95
US7139201B2Nov 21, 2006
Non-volatile semiconductor memory device and memory system using the same
TOSHIBA KK24 citations93
US6967892B2Nov 22, 2005
Non-volatile semiconductor memory device and memory system using the same
TOSHIBA KK27 citations93
US6781895B1Aug 24, 2004
Non-volatile semiconductor memory device and memory system using the same
TOSHIBA KK27 citations93
US5818791AOct 6, 1998
Non-volatile semiconductor memory device and memory system using the same
TOSHIBA KK24 citations93
US5592001AJan 7, 1997
Non-volatile semiconductor memory device
TOSHIBA KK40 citations93
US5436913AJul 25, 1995
Non-volatile semiconductor memory device using successively longer write pulses
TOSHIBA KK38 citations93
US5384742AJan 24, 1995
Non-volatile semiconductor memory
TOSHIBA KK27 citations93
US4922133AMay 1, 1990
Voltage detecting circuit
TOSHIBA KK29 citations93
US5824583AOct 20, 1998
Non-volatile semiconductor memory and method of manufacturing the same
TOSHIBA KK26 citations92
US5732022AMar 24, 1998
Non-volatile semiconductor memory device
TOSHIBA KK25 citations92
US5519654AMay 21, 1996
Semiconductor memory device with external capacitor to charge pump in an EEPROM circuit
TOSHIBA KK45 citations92
US5420822AMay 30, 1995
Non-volatile semiconductor memory device
TOSHIBA KK34 citations92
US5323039AJun 21, 1994
Non-volatile semiconductor memory and method of manufacturing the same
TOSHIBA KK20 citations92
US5153684AOct 6, 1992
Nonvolatile semiconductor memory device with offset transistor
TOSHIBA KK32 citations92
US5138579AAug 11, 1992
Semiconductor memory device having transfer gates which prevent high voltages from being applied to memory and dummy cells in the reading operation
TOSHIBA KK34 citations92
US5067111ANov 19, 1991
Semiconductor memory device having a majority logic for determining data to be read out
TOSHIBA KK27 citations92
US5055706AOct 8, 1991
Delay circuit that resets after pulse-like noise
TOSHIBA KK30 citations92
US5034926AJul 23, 1991
Non-volatile semiconductor memory
TOSHIBA KK51 citations92
US4979146ADec 18, 1990
Electrically erasable non-volatile semiconductor device
TOSHIBA KK43 citations92
US4882507ANov 21, 1989
Output circuit of semiconductor integrated circuit device
TOSHIBA KK25 citations92
US4858192AAug 15, 1989
Semiconductor memory device with redundancy circuit
TOSHIBA KK28 citations92
US4692834ASep 8, 1987
Electrostatic discharge protection circuit with variable limiting threshold for MOS device
TOSHIBA KK34 citations92
US5636160AJun 3, 1997
Nonvolatile semiconductor memory having a stress relaxing voltage applied to erase gate during data write
TOSHIBA KK30 citations90
TOKYO SHIBAURA ELECTRIC CO
10 patentsUS4597062AJun 24, 1986
Non-volatile semiconductor memory system
TOKYO SHIBAURA ELECTRIC CO47 citations96
US4556961ADec 3, 1985
Semiconductor memory with delay means to reduce peak currents
TOKYO SHIBAURA ELECTRIC CO88 citations96
US4509148AApr 2, 1985
Semiconductor memory device
TOKYO SHIBAURA ELECTRIC CO52 citations96
US4473762ASep 25, 1984
Semiconductor integrated circuit with a response time compensated with respect to temperature
TOKYO SHIBAURA ELECTRIC CO103 citations96
US4612462ASep 16, 1986
Logic circuit having voltage booster
TOKYO SHIBAURA ELECTRIC CO34 citations93
US4506350AMar 19, 1985
Non-volatile semiconductor memory system
TOKYO SHIBAURA ELECTRIC CO34 citations93
US4425632AJan 10, 1984
Nonvolatile semiconductor memory device
TOKYO SHIBAURA ELECTRIC CO31 citations93
US4365316ADec 21, 1982
Multifunction terminal circuit
TOKYO SHIBAURA ELECTRIC CO44 citations93
US4495693AJan 29, 1985
Method of integrating MOS devices of double and single gate structure
TOKYO SHIBAURA ELECTRIC CO71 citations92
US4385337AMay 24, 1983
Circuit including an MOS transistor whose gate is protected from oxide rupture
TOKYO SHIBAURA ELECTRIC CO50 citations92
TAKIZAWA MAKOTO
1 patentShowing the top 50 of 92 patents by PatentIndex Score.