Inventor
YOON IL YOUNG
KR19 patents
⚠️ This page may combine multiple inventors who share the name “YOON IL YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
15 patentsUS10943908B2Mar 9, 2021
Method of forming semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations79
US11011526B2May 18, 2021
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD4 citations70
US10056466B2Aug 21, 2018
Methods for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations66
US11251229B2Feb 15, 2022
Method of manufacturing an image sensor having an etch stop layer on an insulation layer
SAMSUNG ELECTRONICS CO LTD0 citations62
US10748968B2Aug 18, 2020
Image sensor having an etch stop layer on the insulation layer
SAMSUNG ELECTRONICS CO LTD1 citations62
US7785951B2Aug 31, 2010
Methods of forming integrated circuit devices having tensile and compressive stress layers therein and devices formed thereby
SAMSUNG ELECTRONICS CO LTD3 citations62
US11361995B2Jun 14, 2022
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US10910266B2Feb 2, 2021
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US11581318B2Feb 14, 2023
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations60
US7786520B2Aug 31, 2010
Embedded semiconductor device including planarization resistance patterns and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations60
US10964751B2Mar 30, 2021
Semiconductor device having plural dummy memory cells
SAMSUNG ELECTRONICS CO LTD0 citations58
US12426305B2Sep 23, 2025
Semiconductor device including transistor having source/drain contract with convex curved surface
SAMSUNG ELECTRONICS CO LTD0 citations51
US9023704B2May 5, 2015
Method for fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US7709927B2May 4, 2010
Shallow trench isolation structures for semiconductor devices including wet etch barriers
SAMSUNG ELECTRONICS CO LTD1 citations51
US10711160B2Jul 14, 2020
Slurry compositions for polishing a metal layer and methods for fabricating semiconductor devices using the same
SAMSUNG ELECTRONICS CO LTD0 citations49