P

Inventor

YOON IL YOUNG

KR19 patents
⚠️ This page may combine multiple inventors who share the name “YOON IL YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

15 patents
US10943908B2Mar 9, 2021

Method of forming semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations79
US11011526B2May 18, 2021

Methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations70
US10056466B2Aug 21, 2018

Methods for fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations66
US11251229B2Feb 15, 2022

Method of manufacturing an image sensor having an etch stop layer on an insulation layer

SAMSUNG ELECTRONICS CO LTD0 citations62
US10748968B2Aug 18, 2020

Image sensor having an etch stop layer on the insulation layer

SAMSUNG ELECTRONICS CO LTD1 citations62
US7785951B2Aug 31, 2010

Methods of forming integrated circuit devices having tensile and compressive stress layers therein and devices formed thereby

SAMSUNG ELECTRONICS CO LTD3 citations62
US11361995B2Jun 14, 2022

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US10910266B2Feb 2, 2021

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations61
US11581318B2Feb 14, 2023

Methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations60
US7786520B2Aug 31, 2010

Embedded semiconductor device including planarization resistance patterns and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations60
US10964751B2Mar 30, 2021

Semiconductor device having plural dummy memory cells

SAMSUNG ELECTRONICS CO LTD0 citations58
US12426305B2Sep 23, 2025

Semiconductor device including transistor having source/drain contract with convex curved surface

SAMSUNG ELECTRONICS CO LTD0 citations51
US9023704B2May 5, 2015

Method for fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US7709927B2May 4, 2010

Shallow trench isolation structures for semiconductor devices including wet etch barriers

SAMSUNG ELECTRONICS CO LTD1 citations51
US10711160B2Jul 14, 2020

Slurry compositions for polishing a metal layer and methods for fabricating semiconductor devices using the same

SAMSUNG ELECTRONICS CO LTD0 citations49

KIM JONG-SU

1 patent

PARK SANG-JINE

1 patent

LEE SE-YOUNG

1 patent

KANG BO-KYEONG

1 patent