Inventor

YANG HYUCK SOO

US4 patents

⚠️ This page may combine multiple inventors who share the name “YANG HYUCK SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES US INC

1 patent

US11522068B2Dec 6, 2022

IC product comprising an insulating gate separation structure positioned between end surfaces of adjacent gate structures

GLOBALFOUNDRIES US INC2 citations71

GLOBALFOUNDRIES INC

1 patent

US10453936B2Oct 22, 2019

Methods of forming replacement gate structures on transistor devices

GLOBALFOUNDRIES INC2 citations71

YANG SEUNG-JIN

1 patent

US8507997B2Aug 13, 2013

Mask read-only memory having a fake select transistor

YANG SEUNG-JIN3 citations60

MICRON TECHNOLOGY INC

1 patent

US12199094B2Jan 14, 2025

Apparatuses including Finfets having different gate oxide configurations, and related computing systems

MICRON TECHNOLOGY INC0 citations58