Inventor

HANSON ALLEN W

US29 patents

⚠️ This page may combine multiple inventors who share the name “HANSON ALLEN W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HANSON ALLEN W

MACOM TECH SOLUTIONS HOLDINGS INC

Barrier for preventing eutectic break-through in through-substrate vias

Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices

FET operational temperature determination by field plate resistance thermometry

FET operational temperature determination by gate structure resistance thermometry

Barrier for preventing eutectic break-through in through-substrate vias

Device isolation design rules for HAST improvement

Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices

Transistor with hole barrier layer

INT RECTIFIER CORP

Method for forming gallium nitride devices with conductive regions

Gallium nitride devices

Gallium nitride devices with vias

Gallium nitride devices with electrically conductive regions

Gallium nitride material transistors and methods associated with the same

Gallium nitride devices

Gallium nitride material devices including diamond regions and methods associated with the same

NITRONEX CORP

III-nitride material structures including silicon substrates

Gallium nitride material devices including conductive regions and methods associated with the same

Gallium nitride material transistors and methods associated with the same

Gallium nitride material transistors and methods associated with the same

Gallium nitride material transistors and methods associated with the same

M/A-COM TECH SOLUTIONS HOLDINGS INC

Parasitic channel mitigation in III-nitride material semiconductor structures

III-nitride semiconductor structures comprising spatially patterned implanted species

HANSON ALLEN W

Field effect transistor with dual etch-stop layers for improved power, performance and reproducibility

InxGa1-xAsYP1-Y quaternary etch stop for improved chemical resistivity of gallium arsenide field effect transistors

WHITAKER CORP

Process for selective recess etching of epitaxial field effect transistors with a novel etch-stop layer

INFINEON TECHNOLOGIES AMERICAS CORP

Methods of manufacturing gallium nitride devices

JOHNSON JERRY WAYNE

Gallium nitride material devices and associated methods

INTERNAT RECTIFER CORP

Gallium nitride devices with conductive regions

THERRIEN ROBERT J

Gallium nitride material devices including conductive regions