Inventor
MIHAILA ANDREI
CH18 patents
⚠️ This page may combine multiple inventors who share the name “MIHAILA ANDREI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
DENSO CORP
7 patentsUS7230275B2Jun 12, 2007
Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same
DENSO CORP12 citations84
US7154130B2Dec 26, 2006
Semiconductor device provided by silicon carbide substrate and method for manufacturing the same
DENSO CORP6 citations73
US7005678B2Feb 28, 2006
Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same
DENSO CORP10 citations73
US7691694B2Apr 6, 2010
Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same
DENSO CORP4 citations62
US7821013B2Oct 26, 2010
Silicon carbide semiconductor device
DENSO CORP2 citations60
US7485509B2Feb 3, 2009
Semiconductor device provided by silicon carbide substrate and method for manufacturing the same
DENSO CORP0 citations52
US7164154B2Jan 16, 2007
Gate wiring layout for silicon-carbide-based junction field effect transistor
DENSO CORP0 citations50
ABB SCHWEIZ AG
5 patentsUS10516022B2Dec 24, 2019
Method for manufacturing a semiconductor device
ABB SCHWEIZ AG1 citations59
US10361082B2Jul 23, 2019
Semiconductor device and method for manufacturing such a semiconductor device
ABB SCHWEIZ AG1 citations59
US10164126B2Dec 25, 2018
Junction barrier schottky diode with enhanced surge current capability
ABB SCHWEIZ AG1 citations50
US10553437B2Feb 4, 2020
Semiconductor device and method for manufacturing such a semiconductor device
ABB SCHWEIZ AG0 citations49
US9659927B2May 23, 2017
Junction barrier Schottky rectifier
ABB SCHWEIZ AG0 citations41
HITACHI ENERGY LTD
3 patentsUS12426343B2Sep 23, 2025
Insulated gate structure, wide bandgap material power device with the same and manufacturing method thereof
HITACHI ENERGY LTD0 citations60
US11967616B2Apr 23, 2024
Vertical silicon carbide power MOSFET and IGBT and a method of manufacturing the same
HITACHI ENERGY LTD0 citations60
US11888037B2Jan 30, 2024
Self-aligned field plate mesa FPM SiC schottky barrier diode
HITACHI ENERGY LTD0 citations46