Inventor
LATCHFORD IAN S
US8 patents
Patents
8 patentsUS6780753B2Aug 24, 2004
Airgap for semiconductor devices
APPLIED MATERIALS INC126 citations96
US5545289AAug 13, 1996
Passivating, stripping and corrosion inhibition of semiconductor substrates
APPLIED MATERIALS INC184 citations94
US5200031AApr 6, 1993
Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from one or more previous metal etch steps
APPLIED MATERIALS INC91 citations90
US5160407ANov 3, 1992
Low pressure anisotropic etch process for tantalum silicide or titanium silicide layer formed over polysilicon layer deposited on silicon oxide layer on semiconductor wafer
APPLIED MATERIALS INC69 citations90
US5296093AMar 22, 1994
Process for removal of residues remaining after etching polysilicon layer in formation of integrated circuit structure
APPLIED MATERIALS INC28 citations89
US5147499ASep 15, 1992
Process for removal of residues remaining after etching polysilicon layer in formation of integrated circuit structure
APPLIED MATERIALS INC45 citations89
US5030590AJul 9, 1991
Process for etching polysilicon layer in formation of integrated circuit structure
APPLIED MATERIALS INC31 citations89
US6913868B2Jul 5, 2005
Conductive bi-layer e-beam resist with amorphous carbon
APPLIED MATERIALS INC14 citations83