Inventor
TAKEHARA TAKAKO
US19 patents
⚠️ This page may combine multiple inventors who share the name “TAKEHARA TAKAKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
14 patentsUS7432201B2Oct 7, 2008
Hybrid PVD-CVD system
APPLIED MATERIALS INC32 citations92
US7086918B2Aug 8, 2006
Low temperature process for passivation applications
APPLIED MATERIALS INC34 citations92
US6451390B1Sep 17, 2002
Deposition of TEOS oxide using pulsed RF plasma
APPLIED MATERIALS INC27 citations92
US5441768AAug 15, 1995
Multi-step chemical vapor deposition method for thin film transistors
APPLIED MATERIALS INC28 citations90
US7655542B2Feb 2, 2010
Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
APPLIED MATERIALS INC6 citations73
US6962732B2Nov 8, 2005
Process for controlling thin film uniformity and products produced thereby
APPLIED MATERIALS INC10 citations73
US6610354B2Aug 26, 2003
Plasma display panel with a low k dielectric layer
APPLIED MATERIALS INC6 citations73
US7915114B2Mar 29, 2011
Low temperature process for TFT fabrication
APPLIED MATERIALS INC6 citations72
US7300829B2Nov 27, 2007
Low temperature process for TFT fabrication
APPLIED MATERIALS INC6 citations72
US6610374B2Aug 26, 2003
Method of annealing large area glass substrates
APPLIED MATERIALS INC11 citations71
US7122962B2Oct 17, 2006
Plasma display panel with a low K dielectric layer
APPLIED MATERIALS INC2 citations62
US7923354B2Apr 12, 2011
Methods for depositing a microcrystalline silicon film for a photovoltaic device
APPLIED MATERIALS INC0 citations52
US7648892B2Jan 19, 2010
Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
APPLIED MATERIALS INC0 citations52
US6827987B2Dec 7, 2004
Method of reducing an electrostatic charge on a substrate during a PECVD process
APPLIED MATERIALS INC1 citations52
APPLIED KOMATSU TECHNOLOGY INC
3 patentsUS6294219B1Sep 25, 2001
Method of annealing large area glass substrates
APPLIED KOMATSU TECHNOLOGY INC17 citations90
US5567476AOct 22, 1996
Multi-step chemical vapor deposition method for thin film transistors
APPLIED KOMATSU TECHNOLOGY INC9 citations71
US6352910B1Mar 5, 2002
Method of depositing amorphous silicon based films having controlled conductivity
APPLIED KOMATSU TECHNOLOGY INC13 citations70