Inventor
ADLER ERIC
US22 patents
⚠️ This page may combine multiple inventors who share the name “ADLER ERIC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
21 patentsUS6259128B1Jul 10, 2001
Metal-insulator-metal capacitor for copper damascene process and method of forming the same
IBM121 citations97
US6624031B2Sep 23, 2003
Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure
IBM62 citations96
US6531375B1Mar 11, 2003
Method of forming a body contact using BOX modification
IBM78 citations96
US6344964B1Feb 5, 2002
Capacitor having sidewall spacer protecting the dielectric layer
IBM67 citations96
US5670812ASep 23, 1997
Field effect transistor having contact layer of transistor gate electrode material
IBM42 citations95
US6476483B1Nov 5, 2002
Method and apparatus for cooling a silicon on insulator device
IBM35 citations92
US6452779B1Sep 17, 2002
One-mask metal-insulator-metal capacitor and method for forming same
IBM33 citations92
US5757050AMay 26, 1998
Field effect transistor having contact layer of transistor gate electrode material
IBM18 citations92
US5744384AApr 28, 1998
Semiconductor structures which incorporate thin film transistors
IBM21 citations92
US6750114B2Jun 15, 2004
One-mask metal-insulator-metal capacitor and method for forming same
IBM11 citations74
US6667539B2Dec 23, 2003
Method to increase the tuning voltage range of MOS varactors
IBM12 citations74
US5691549ANov 25, 1997
Sidewall strap
IBM15 citations74
US7132325B2Nov 7, 2006
Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure
IBM10 citations73
US6770907B2Aug 3, 2004
Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure
IBM5 citations73
US6433372B1Aug 13, 2002
Dense multi-gated device design
IBM9 citations73
US7302376B2Nov 27, 2007
Device modeling for proximity effects
IBM7 citations69
US6993814B2Feb 7, 2006
Method of fabricating a capacitor having sidewall spacer protecting the dielectric layer
IBM4 citations63
US5521118AMay 28, 1996
Sidewall strap
IBM4 citations63
US6683345B1Jan 27, 2004
Semiconductor device and method for making the device having an electrically modulated conduction channel
IBM6 citations61
US6913965B2Jul 5, 2005
Non-Continuous encapsulation layer for MIM capacitor
IBM4 citations60
US7326987B2Feb 5, 2008
Non-continuous encapsulation layer for MIM capacitor
IBM2 citations59