Inventor
KANBARA YASUO
JP26 patents
⚠️ This page may combine multiple inventors who share the name “KANBARA YASUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AMMONO SP ZOO
17 patentsUS7420261B2Sep 2, 2008
Bulk nitride mono-crystal including substrate for epitaxy
AMMONO SP ZOO93 citations97
US7364619B2Apr 29, 2008
Process for obtaining of bulk monocrystalline gallium-containing nitride
AMMONO SP ZOO83 citations97
US7335262B2Feb 26, 2008
Apparatus for obtaining a bulk single crystal using supercritical ammonia
AMMONO SP ZOO81 citations97
US7160388B2Jan 9, 2007
Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
AMMONO SP ZOO140 citations96
US7057211B2Jun 6, 2006
Nitride semiconductor laser device and manufacturing method thereof
AMMONO SP ZOO51 citations96
US7750355B2Jul 6, 2010
Light emitting element structure using nitride bulk single crystal layer
AMMONO SP ZOO22 citations92
US7422633B2Sep 9, 2008
Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate
AMMONO SP ZOO23 citations92
US7410539B2Aug 12, 2008
Template type substrate and a method of preparing the same
AMMONO SP ZOO16 citations92
US7387677B2Jun 17, 2008
Substrate for epitaxy and method of preparing the same
AMMONO SP ZOO36 citations92
US7374615B2May 20, 2008
Method and equipment for manufacturing aluminum nitride bulk single crystal
AMMONO SP ZOO21 citations92
US7935550B2May 3, 2011
Method of forming light-emitting device using nitride bulk single crystal layer
AMMONO SP ZOO7 citations84
US7589358B2Sep 15, 2009
Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same
AMMONO SP ZOO14 citations84
US7314517B2Jan 1, 2008
Process for obtaining bulk mono-crystalline gallium-containing nitride
AMMONO SP ZOO17 citations84
US7315559B2Jan 1, 2008
Nitride semiconductor laser device and a method for improving its performance
AMMONO SP ZOO10 citations83
US7905957B2Mar 15, 2011
Method of obtaining bulk single crystals by seeded growth
AMMONO SP ZOO3 citations62
US7811380B2Oct 12, 2010
Process for obtaining bulk mono-crystalline gallium-containing nitride
AMMONO SP ZOO1 citations52
US7871843B2Jan 18, 2011
Method of preparing light emitting device
AMMONO SP ZOO0 citations41
NICHIA CORP
5 patentsUS7132730B2Nov 7, 2006
Bulk nitride mono-crystal including substrate for epitaxy
NICHIA CORP113 citations97
US7252712B2Aug 7, 2007
Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
NICHIA CORP85 citations96
US6656615B2Dec 2, 2003
Bulk monocrystalline gallium nitride
NICHIA CORP220 citations96
US7081162B2Jul 25, 2006
Method of manufacturing bulk single crystal of gallium nitride
NICHIA CORP32 citations92
US7744697B2Jun 29, 2010
Bulk monocrystalline gallium nitride
NICHIA CORP0 citations40
DWILINSKI ROBERT
3 patentsUS8754449B2Jun 17, 2014
High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof
DWILINSKI ROBERT2 citations60
US8110848B2Feb 7, 2012
Substrate for epitaxy and method of preparing the same
DWILINSKI ROBERT0 citations49
US8398767B2Mar 19, 2013
Bulk mono-crystalline gallium-containing nitride and its application
DWILINSKI ROBERT0 citations47