P

Inventor

OHTSUKA HISASHI

JP31 patents
⚠️ This page may combine multiple inventors who share the name “OHTSUKA HISASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUJIFILM CORP

18 patents
US7738107B2Jun 15, 2010

Surface plasmon enhanced fluorescence sensor and fluorescence detecting method

FUJIFILM CORP8 citations83
US7682566B2Mar 23, 2010

Sensor unit for assay in utilizing attenuated total reflection

FUJIFILM CORP4 citations63
US7579588B2Aug 25, 2009

Base plate for use in mass spectrometry analysis, and method and apparatus for mass spectrometry analysis

FUJIFILM CORP6 citations63
US7413911B2Aug 19, 2008

Method for measuring reaction rate coefficient by surface plasmon resonance analysis

FUJIFILM CORP3 citations63
US7356065B2Apr 8, 2008

Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode

FUJIFILM CORP1 citations63
US7330263B2Feb 12, 2008

Measurement method and apparatus

FUJIFILM CORP5 citations63
US7715012B2May 11, 2010

Sensor unit and assay method of assay in utilizing attenuated total reflection

FUJIFILM CORP3 citations62
US7515270B2Apr 7, 2009

Sensor unit and assay method of assay in utilizing attenuated total reflection

FUJIFILM CORP3 citations62
US8039267B2Oct 18, 2011

Detection method, detection apparatus, and sample cell and kit for detection

FUJIFILM CORP1 citations52
US8039268B2Oct 18, 2011

Immunochromatoassay method and immunochromatoassay kit

FUJIFILM CORP0 citations52
US7439078B2Oct 21, 2008

Method for measuring dissociation rate coefficient by surface plasmon resonance analysis

FUJIFILM CORP1 citations52
US7418023B2Aug 26, 2008

Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, SM3+, EU3+, DY3+, ER3+ and TB3+ is excited with GaN-based compound laser diode

FUJIFILM CORP0 citations52
US7411990B2Aug 12, 2008

Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode

FUJIFILM CORP0 citations52
US7403554B2Jul 22, 2008

Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode

FUJIFILM CORP0 citations52
US7362789B2Apr 22, 2008

Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode

FUJIFILM CORP0 citations52
US7365853B2Apr 29, 2008

Measuring method and measuring apparatus utilizing attenuated total reflection

FUJIFILM CORP1 citations51
US7885769B2Feb 8, 2011

Screening method and apparatus

FUJIFILM CORP0 citations42
US7701579B2Apr 20, 2010

Fluorescence sensor

FUJIFILM CORP0 citations42

FUJI PHOTO FILM CO LTD

10 patents

OHTSUKA HISASHI

2 patents

MURAKAMI NAOKI

1 patent