Inventor
OHTSUKA HISASHI
JP31 patents
⚠️ This page may combine multiple inventors who share the name “OHTSUKA HISASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJIFILM CORP
18 patentsUS7738107B2Jun 15, 2010
Surface plasmon enhanced fluorescence sensor and fluorescence detecting method
FUJIFILM CORP8 citations83
US7682566B2Mar 23, 2010
Sensor unit for assay in utilizing attenuated total reflection
FUJIFILM CORP4 citations63
US7579588B2Aug 25, 2009
Base plate for use in mass spectrometry analysis, and method and apparatus for mass spectrometry analysis
FUJIFILM CORP6 citations63
US7413911B2Aug 19, 2008
Method for measuring reaction rate coefficient by surface plasmon resonance analysis
FUJIFILM CORP3 citations63
US7356065B2Apr 8, 2008
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode
FUJIFILM CORP1 citations63
US7330263B2Feb 12, 2008
Measurement method and apparatus
FUJIFILM CORP5 citations63
US7715012B2May 11, 2010
Sensor unit and assay method of assay in utilizing attenuated total reflection
FUJIFILM CORP3 citations62
US7515270B2Apr 7, 2009
Sensor unit and assay method of assay in utilizing attenuated total reflection
FUJIFILM CORP3 citations62
US8039267B2Oct 18, 2011
Detection method, detection apparatus, and sample cell and kit for detection
FUJIFILM CORP1 citations52
US8039268B2Oct 18, 2011
Immunochromatoassay method and immunochromatoassay kit
FUJIFILM CORP0 citations52
US7439078B2Oct 21, 2008
Method for measuring dissociation rate coefficient by surface plasmon resonance analysis
FUJIFILM CORP1 citations52
US7418023B2Aug 26, 2008
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, SM3+, EU3+, DY3+, ER3+ and TB3+ is excited with GaN-based compound laser diode
FUJIFILM CORP0 citations52
US7411990B2Aug 12, 2008
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode
FUJIFILM CORP0 citations52
US7403554B2Jul 22, 2008
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode
FUJIFILM CORP0 citations52
US7362789B2Apr 22, 2008
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode
FUJIFILM CORP0 citations52
US7365853B2Apr 29, 2008
Measuring method and measuring apparatus utilizing attenuated total reflection
FUJIFILM CORP1 citations51
US7885769B2Feb 8, 2011
Screening method and apparatus
FUJIFILM CORP0 citations42
US7701579B2Apr 20, 2010
Fluorescence sensor
FUJIFILM CORP0 citations42
FUJI PHOTO FILM CO LTD
10 patentsUS5446750AAug 29, 1995
Laser diode pumped solid laser
FUJI PHOTO FILM CO LTD55 citations95
US6791691B2Sep 14, 2004
Measuring method and apparatus using attenuation in total internal reflection
FUJI PHOTO FILM CO LTD16 citations84
US6058126AMay 2, 2000
Laser-diode-pumped solid state laser and radiation image read-out system
FUJI PHOTO FILM CO LTD18 citations84
US7154930B2Dec 26, 2006
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode
FUJI PHOTO FILM CO LTD4 citations74
US7102754B2Sep 5, 2006
Measuring method and apparatus using attenuation in total internal reflection
FUJI PHOTO FILM CO LTD10 citations74
US6816532B2Nov 9, 2004
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of ho3+, sm3+, eu3+, dy3+, er3+, and tb3+is excited with gan-based compound laser diode
FUJI PHOTO FILM CO LTD8 citations74
US6795475B1Sep 21, 2004
Solid-state laser apparatus excited by laser light from semiconductor laser unit having increased resonator length
FUJI PHOTO FILM CO LTD2 citations63
US6341139B1Jan 22, 2002
Semiconductor-laser-pumped solid state laser
FUJI PHOTO FILM CO LTD6 citations63
US6049555AApr 11, 2000
Laser-diode-pumped solid state laser
FUJI PHOTO FILM CO LTD6 citations63
US6314120B1Nov 6, 2001
Semiconductor laser pumped solid state laser
FUJI PHOTO FILM CO LTD0 citations52