Inventor
HERNER BRAD
US11 patents
⚠️ This page may combine multiple inventors who share the name “HERNER BRAD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK 3D LLC
6 patentsUS7824956B2Nov 2, 2010
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
SANDISK 3D LLC101 citations98
US7129538B2Oct 31, 2006
Dense arrays and charge storage devices
SANDISK 3D LLC203 citations98
US7902537B2Mar 8, 2011
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
SANDISK 3D LLC8 citations83
US8373150B2Feb 12, 2013
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
SANDISK 3D LLC1 citations62
US7846785B2Dec 7, 2010
Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
SANDISK 3D LLC2 citations62
US8816315B2Aug 26, 2014
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
SANDISK 3D LLC0 citations51
SCHRICKER APRIL
4 patentsUS8233308B2Jul 31, 2012
Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
SCHRICKER APRIL80 citations96
US8558220B2Oct 15, 2013
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
SCHRICKER APRIL17 citations83
US8236623B2Aug 7, 2012
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
SCHRICKER APRIL7 citations83
US8913417B2Dec 16, 2014
Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
SCHRICKER APRIL3 citations61