Inventor
KONEVECKI MICHAEL W
US16 patents
⚠️ This page may combine multiple inventors who share the name “KONEVECKI MICHAEL W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK 3D LLC
12 patentsUS7915164B2Mar 29, 2011
Method for forming doped polysilicon via connecting polysilicon layers
SANDISK 3D LLC251 citations99
US7566974B2Jul 28, 2009
Doped polysilicon via connecting polysilicon layers
SANDISK 3D LLC190 citations99
US7575984B2Aug 18, 2009
Conductive hard mask to protect patterned features during trench etch
SANDISK 3D LLC111 citations97
US7307013B2Dec 11, 2007
Nonselective unpatterned etchback to expose buried patterned features
SANDISK 3D LLC67 citations97
US7517796B2Apr 14, 2009
Method for patterning submicron pillars
SANDISK 3D LLC22 citations92
US7915163B2Mar 29, 2011
Method for forming doped polysilicon via connecting polysilicon layers
SANDISK 3D LLC4 citations74
US7718546B2May 18, 2010
Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon
SANDISK 3D LLC6 citations73
US7794921B2Sep 14, 2010
Imaging post structures using x and y dipole optics and a single mask
SANDISK 3D LLC6 citations72
US7994068B2Aug 9, 2011
Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon
SANDISK 3D LLC2 citations62
US7955515B2Jun 7, 2011
Method of plasma etching transition metal oxides
SANDISK 3D LLC2 citations62
US7846785B2Dec 7, 2010
Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
SANDISK 3D LLC2 citations62
US8722518B2May 13, 2014
Methods for protecting patterned features during trench etch
SANDISK 3D LLC0 citations52
SCHRICKER APRIL
2 patentsUS8233308B2Jul 31, 2012
Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
SCHRICKER APRIL80 citations96
US8913417B2Dec 16, 2014
Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
SCHRICKER APRIL3 citations61