Inventor
YANG DAEWON
US21 patents
⚠️ This page may combine multiple inventors who share the name “YANG DAEWON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
15 patentsUS7462527B2Dec 9, 2008
Method of forming nitride films with high compressive stress for improved PFET device performance
IBM14 citations89
US7563704B2Jul 21, 2009
Method of forming an interconnect including a dielectric cap having a tensile stress
IBM12 citations84
US7521307B2Apr 21, 2009
CMOS structures and methods using self-aligned dual stressed layers
IBM10 citations84
US8030707B2Oct 4, 2011
Semiconductor structure
IBM13 citations83
US6914015B2Jul 5, 2005
HDP process for high aspect ratio gap filling
IBM14 citations80
US6911378B2Jun 28, 2005
Stabilization of fluorine-containing dielectric materials in a metal insulator wiring structure
IBM6 citations74
US7514370B2Apr 7, 2009
Compressive nitride film and method of manufacturing thereof
IBM6 citations72
US7750414B2Jul 6, 2010
Structure and method for reducing threshold voltage variation
IBM4 citations63
US7521308B2Apr 21, 2009
Dual layer stress liner for MOSFETS
IBM3 citations61
US9318344B2Apr 19, 2016
CMOS structures and methods for improving yield
IBM0 citations52
US7943467B2May 17, 2011
Structure and method to fabricate MOSFET with short gate
IBM1 citations52
US7851376B2Dec 14, 2010
Compressive nitride film and method of manufacturing thereof
IBM0 citations51
US7804136B2Sep 28, 2010
Method of forming nitride films with high compressive stress for improved PFET device performance
IBM0 citations49
US7491660B2Feb 17, 2009
Method of forming nitride films with high compressive stress for improved PFET device performance
IBM0 citations49
US7179760B2Feb 20, 2007
Bilayer cap structure including HDP/bHDP films for conductive metallization and method of making same
IBM1 citations49