Inventor
LEE JANGEUN
US30 patents
⚠️ This page may combine multiple inventors who share the name “LEE JANGEUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
15 patentsUS9184375B1Nov 10, 2015
Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories
SAMSUNG ELECTRONICS CO LTD36 citations94
US8345474B2Jan 1, 2013
Magnetic memory devices including magnetic layers having different products of saturated magnetization and thickness and related methods
SAMSUNG ELECTRONICS CO LTD49 citations93
US8847341B2Sep 30, 2014
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD4 citations83
US11121309B2Sep 14, 2021
Magnetic memory devices including magnetic tunnel junctions
SAMSUNG ELECTRONICS CO LTD2 citations73
US9577181B2Feb 21, 2017
Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories
SAMSUNG ELECTRONICS CO LTD2 citations73
US9508924B2Nov 29, 2016
Method and system for providing rare earth magnetic junctions usable in spin transfer torque magnetic random access memory applications
SAMSUNG ELECTRONICS CO LTD2 citations63
US12349443B2Jul 1, 2025
Gate structures and semiconductor devices including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11588100B2Feb 21, 2023
Magnetic memory devices including magnetic tunnel junctions
SAMSUNG ELECTRONICS CO LTD0 citations62
US12237324B2Feb 25, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11456332B2Sep 27, 2022
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9559296B2Jan 31, 2017
Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layer
SAMSUNG ELECTRONICS CO LTD1 citations51
US9343660B2May 17, 2016
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US9048417B2Jun 2, 2015
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US8785901B2Jul 22, 2014
Semiconductor devices having metal oxide patterns
SAMSUNG ELECTRONICS CO LTD0 citations51
US9799382B2Oct 24, 2017
Method for providing a magnetic junction on a substrate and usable in a magnetic device
SAMSUNG ELECTRONICS CO LTD0 citations40
OH SECHUNG
5 patentsUS8692342B2Apr 8, 2014
Magnetic memory devices having a uniform perpendicular nonmagnetic metal rich anisotropy enhanced pattern
OH SECHUNG41 citations97
US9318695B2Apr 19, 2016
Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern
OH SECHUNG12 citations83
US9048412B2Jun 2, 2015
Magnetic memory devices including magnetic layers separated by tunnel barriers
OH SECHUNG9 citations83
US8987850B2Mar 24, 2015
Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern
OH SECHUNG4 citations83
US8445979B2May 21, 2013
Magnetic memory devices including magnetic layers separated by tunnel barriers
OH SECHUNG9 citations83
KIM WOOJIN
4 patentsUS8405173B2Mar 26, 2013
Magnetic memory devices
KIM WOOJIN7 citations83
US8852960B2Oct 7, 2014
Method of fabricating semiconductor device and apparatus for fabricating the same
KIM WOOJIN1 citations51
US8722211B2May 13, 2014
Magnetic memory devices and methods of manufacturing such magnetic memory devices
KIM WOOJIN1 citations51
US8648434B2Feb 11, 2014
Magnetic memory devices
KIM WOOJIN0 citations50
NAM KYUNGTAE
4 patentsUS8575667B2Nov 5, 2013
Magnetic memory devices with thin conductive bridges
NAM KYUNGTAE2 citations61
US8198102B2Jun 12, 2012
Methods of fabricating magnetic memory devices with thin conductive bridges
NAM KYUNGTAE3 citations61
US8129806B2Mar 6, 2012
Magnetic memory device
NAM KYUNGTAE4 citations61
US8310019B2Nov 13, 2012
Magnetic memory device
NAM KYUNGTAE1 citations51