Inventor
YANG YU-RU
TW30 patents
⚠️ This page may combine multiple inventors who share the name “YANG YU-RU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
27 patentsUS6849541B1Feb 1, 2005
Method of fabricating a dual damascene copper wire
UNITED MICROELECTRONICS CORP29 citations92
US6043148AMar 28, 2000
Method of fabricating contact plug
UNITED MICROELECTRONICS CORP21 citations89
US10283564B1May 7, 2019
Semiconductor structure and the method of making the same
UNITED MICROELECTRONICS CORP8 citations84
US10269868B1Apr 23, 2019
Semiconductor structure and the method of making the same
UNITED MICROELECTRONICS CORP12 citations84
US10177311B1Jan 8, 2019
Resistive random access memory (RRAM) and fabrication method thereof
UNITED MICROELECTRONICS CORP11 citations84
US10068963B2Sep 4, 2018
Fin-type field effect transistor and method of forming the same
UNITED MICROELECTRONICS CORP7 citations83
US9318389B1Apr 19, 2016
Integrated circuit having plural transistors with work function metal gate structures
UNITED MICROELECTRONICS CORP10 citations83
US7199040B2Apr 3, 2007
Barrier layer structure
UNITED MICROELECTRONICS CORP8 citations74
US7397124B2Jul 8, 2008
Process of metal interconnects
UNITED MICROELECTRONICS CORP8 citations73
US5990004ANov 23, 1999
Method for forming a tungsten plug and a barrier layer in a contact of high aspect ratio
UNITED MICROELECTRONICS CORP10 citations73
US11545521B2Jan 3, 2023
Magnetic tunnel junction (MTJ) device and forming method thereof
UNITED MICROELECTRONICS CORP2 citations72
US9754841B2Sep 5, 2017
Method of forming integrated circuit having plural transistors with work function metal gate structures
UNITED MICROELECTRONICS CORP3 citations72
US11950431B2Apr 2, 2024
Magnetic tunnel junction (MTJ) device and forming method thereof
UNITED MICROELECTRONICS CORP0 citations62
US10943948B2Mar 9, 2021
Magnetic tunnel junction (MTJ) device and forming method thereof
UNITED MICROELECTRONICS CORP0 citations62
US11818966B2Nov 14, 2023
Resistive random access memory and manufacturing method thereof
UNITED MICROELECTRONICS CORP0 citations61
US10636794B2Apr 28, 2020
Magnetic tunnel junction structure of magnetic random access memory cell
UNITED MICROELECTRONICS CORP0 citations52
US10312238B2Jun 4, 2019
Manufacturing method of magnetic random access memory cell
UNITED MICROELECTRONICS CORP0 citations52
US7645698B2Jan 12, 2010
Method for forming barrier layer
UNITED MICROELECTRONICS CORP0 citations52
US10439023B2Oct 8, 2019
Fin-type field effect transistor and method of forming the same
UNITED MICROELECTRONICS CORP0 citations51
US10177231B2Jan 8, 2019
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations51
US9837493B2Dec 5, 2017
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations51
US9673040B2Jun 6, 2017
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations51
US9349822B2May 24, 2016
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations51
US8993390B2Mar 31, 2015
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations51
US10573649B2Feb 25, 2020
Semiconductor device and manufacturing method thereof
UNITED MICROELECTRONICS CORP0 citations41
US10497797B2Dec 3, 2019
Semiconductor structure and manufacturing method thereof
UNITED MICROELECTRONICS CORP0 citations41
US9590041B1Mar 7, 2017
Semiconductor structure
UNITED MICROELECTRONICS CORP0 citations41