Inventor
LI YUNG-TA
TW13 patents
⚠️ This page may combine multiple inventors who share the name “LI YUNG-TA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
7 patentsUS9543419B1Jan 10, 2017
FinFET structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD25 citations94
US9620633B2Apr 11, 2017
Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structure
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US10923566B2Feb 16, 2021
Semiconductor structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9887274B2Feb 6, 2018
FinFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10354998B2Jul 16, 2019
Structures and methods for fabricating semiconductor devices using fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9871037B2Jan 16, 2018
Structures and methods for fabricating semiconductor devices using fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9437699B2Sep 6, 2016
Method of forming nanowires
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TAIWAN SEMICONDUCTOR MFG
3 patentsUS8987791B2Mar 24, 2015
FinFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG18 citations92
US9263586B2Feb 16, 2016
Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structure
TAIWAN SEMICONDUCTOR MFG2 citations62
US9349841B2May 24, 2016
FinFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG0 citations52