Inventor

DARGIS RYTIS

US39 patents

⚠️ This page may combine multiple inventors who share the name “DARGIS RYTIS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DARGIS RYTIS

IQE PLC

Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride

Re-based integrated photonic and electronic layered structures

Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride

Structure and method using a single crystalline bixbyite oxide layer in a orientation

Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor

Integrated epitaxial metal electrodes

Epitaxial metal oxide as buffer for epitaxial III-V layers

Rare earth pnictides for strain management

III-N to rare earth transition in a semiconductor structure

Pnictide nanocomposite structure for lattice stabilization

Pnictide buffer structures and devices for GaN base applications

Epitaxial AIN/cREO structure for RF filter applications

Metal electrode with tunable work functions

Integrated epitaxial metal electrodes

Integrated epitaxial metal electrodes

DARGIS RYTIS

GaN on Si(100) substrate using epi-twist

Stress mitigating amorphous SiO2 interlayer

REO gate dielectric for III-N device on Si substrate

Oxygen engineered single-crystal REO template

Single crystal reo buffer on amorphous SiOx

III-N material grown on ErAlN buffer on Si substrate

III-N semiconductor layer on Si substrate

Heterostructure with carrier concentration enhanced by single crystal REO induced strains

III-N material grown on REN epitaxial buffer on Si substrate

REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate

Method of growing III-N semiconductor layer on Si substrate

Strain compensated REO buffer for III-N on silicon

ARKUN ERDEM

REO/ALO/A1N template for III-N material growth on silicon

A1N inter-layers in III-N material grown on DBR/silicon substrate

AlN inter-layers in III-N material grown on REO/silicon substrate

III-N material grown on AIO/AIN buffer on Si substrate

AlN cap grown on GaN/REO/silicon substrate structure

IIIOxNy on single crystal SOI substrate and III n growth platform

III-N material grown on ErAIN buffer on Si substrate

IR sensor using REO up-conversion

TRANSLUCENT INC

Re-silicide gate electrode for III-N device on Si substrate

Stress mitigating amorphous SiO2 interlayer

Nucleation of III-N on REO templates

CLARK ANDREW

Modification of REO by subsequent III-N EPI process