Inventor
IUCOLANO FERDINANDO
IT32 patents
Patents
32 patentsUS10381470B2Aug 13, 2019
Double-channel HEMT device and manufacturing method thereof
ST MICROELECTRONICS SRL5 citations83
US10050136B2Aug 14, 2018
High-power and high-frequency heterostructure field-effect transistor
ST MICROELECTRONICS SRL6 citations83
US11489068B2Nov 1, 2022
Double-channel HEMT device and manufacturing method thereof
ST MICROELECTRONICS SRL1 citations72
US11316038B2Apr 26, 2022
HEMT transistor with adjusted gate-source distance, and manufacturing method thereof
ST MICROELECTRONICS SRL2 citations72
US10896969B2Jan 19, 2021
Manufacturing method of an HEMT transistor of the normally off type with reduced resistance in the on state and HEMT transistor
ST MICROELECTRONICS SRL2 citations72
US10651304B2May 12, 2020
High-power and high-frequency heterostructure field-effect transistor
ST MICROELECTRONICS SRL2 citations72
US11222969B2Jan 11, 2022
Normally-off transistor with reduced on-state resistance and manufacturing method
ST MICROELECTRONICS SRL4 citations71
US10522646B2Dec 31, 2019
HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method
ST MICROELECTRONICS SRL2 citations71
US10566450B2Feb 18, 2020
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof
ST MICROELECTRONICS SRL4 citations70
US10396192B2Aug 27, 2019
HEMT transistors with improved electron mobility
ST MICROELECTRONICS SRL1 citations69
US9882040B2Jan 30, 2018
Method for manufacturing a HEMT transistor and HEMT transistor with improved electron mobility
ST MICROELECTRONICS SRL2 citations69
US12062715B2Aug 13, 2024
HEMT transistor with adjusted gate-source distance, and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations62
US11538922B2Dec 27, 2022
Manufacturing method of an HEMT transistor of the normally off type with reduced resistance in the on state and HEMT transistor
ST MICROELECTRONICS SRL0 citations62
US12457765B2Oct 28, 2025
Normally-off transistor with reduced on-state resistance and manufacturing method
ST MICROELECTRONICS SRL0 citations61
US12278283B2Apr 15, 2025
HEMT transistor including an improved gate region and related manufacturing process
ST MICROELECTRONICS SRL0 citations61
US12154967B2Nov 26, 2024
Method for manufacturing an ohmic contact for a HEMT device
ST MICROELECTRONICS SRL1 citations61
US12148823B2Nov 19, 2024
Double-channel HEMT device and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations61
US11862707B2Jan 2, 2024
HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method
ST MICROELECTRONICS SRL0 citations61
US11799025B2Oct 24, 2023
HEMT transistor including an improved gate region and related manufacturing process
ST MICROELECTRONICS SRL0 citations61
US11101363B2Aug 24, 2021
HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method
ST MICROELECTRONICS SRL0 citations61
US10892357B2Jan 12, 2021
Double-channel HEMT device and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations61
US11699748B2Jul 11, 2023
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations60
US11043574B2Jun 22, 2021
Method of manufacturing a HEMT device with reduced gate leakage current, and HEMT device
ST MICROELECTRONICS SRL0 citations60
US11038047B2Jun 15, 2021
Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations60
US12520517B2Jan 6, 2026
HEMT device having low conduction losses and manufacturing process thereof
ST MICROELECTRONICS SRL0 citations59
US11728404B2Aug 15, 2023
Method of manufacturing a HEMT device with reduced gate leakage current, and HEMT device
ST MICROELECTRONICS SRL0 citations59
US10032898B2Jul 24, 2018
Method for manufacturing a HEMT transistor and HEMT transistor with improved electron mobility
ST MICROELECTRONICS SRL1 citations59
US12218231B2Feb 4, 2025
HEMT transistor including field plate regions and manufacturing process thereof
ST MICROELECTRONICS SRL0 citations51
US10411123B2Sep 10, 2019
High-power and high-frequency heretostructure field-effect transistor
ST MICROELECTRONICS SRL0 citations51
US12165871B2Dec 10, 2024
Method for manufacturing a gate terminal of a HEMT device, and HEMT device
ST MICROELECTRONICS SRL0 citations50
US11854977B2Dec 26, 2023
GAN-based, lateral-conduction, electronic device with improved metallic layers layout
ST MICROELECTRONICS SRL0 citations50
US10516041B2Dec 24, 2019
HEMT transistor with high stress resilience during off state and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations40