Inventor
CHINI ALESSANDRO
IT13 patents
⚠️ This page may combine multiple inventors who share the name “CHINI ALESSANDRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
9 patentsUS10381470B2Aug 13, 2019
Double-channel HEMT device and manufacturing method thereof
ST MICROELECTRONICS SRL5 citations83
US11489068B2Nov 1, 2022
Double-channel HEMT device and manufacturing method thereof
ST MICROELECTRONICS SRL1 citations72
US10522646B2Dec 31, 2019
HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method
ST MICROELECTRONICS SRL2 citations71
US12148823B2Nov 19, 2024
Double-channel HEMT device and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations61
US11862707B2Jan 2, 2024
HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method
ST MICROELECTRONICS SRL0 citations61
US11101363B2Aug 24, 2021
HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method
ST MICROELECTRONICS SRL0 citations61
US10892357B2Jan 12, 2021
Double-channel HEMT device and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations61
US12218231B2Feb 4, 2025
HEMT transistor including field plate regions and manufacturing process thereof
ST MICROELECTRONICS SRL0 citations51
US10516041B2Dec 24, 2019
HEMT transistor with high stress resilience during off state and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations40