Inventor
KIM SUNGLYONG
US30 patents
⚠️ This page may combine multiple inventors who share the name “KIM SUNGLYONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
20 patentsUS11658241B2May 23, 2023
Vertical trench gate MOSFET with integrated Schottky diode
TEXAS INSTRUMENTS INC4 citations74
US11322610B2May 3, 2022
High voltage lateral junction diode device
TEXAS INSTRUMENTS INC2 citations73
US11127852B2Sep 21, 2021
Vertical trench gate MOSFET with deep well region for junction termination
TEXAS INSTRUMENTS INC2 citations73
US10936000B1Mar 2, 2021
Multi-mode high voltage circuit
TEXAS INSTRUMENTS INC2 citations71
US10840241B2Nov 17, 2020
Resistor divider with improved resistor matching
TEXAS INSTRUMENTS INC2 citations70
US11791198B2Oct 17, 2023
Trench shield isolation layer
TEXAS INSTRUMENTS INC0 citations62
US11302568B2Apr 12, 2022
Trench shield isolation layer
TEXAS INSTRUMENTS INC0 citations62
US11239318B2Feb 1, 2022
High-voltage drain expended MOS transistor
TEXAS INSTRUMENTS INC0 citations62
US10651274B2May 12, 2020
High-voltage drain extended MOS transistor
TEXAS INSTRUMENTS INC1 citations62
US10559681B2Feb 11, 2020
High voltage lateral junction diode device
TEXAS INSTRUMENTS INC1 citations62
US12336299B2Jun 17, 2025
Electrostatic discharge guard ring with snapback protection
TEXAS INSTRUMENTS INC0 citations61
US12094970B2Sep 17, 2024
Electrostatic discharge guard ring with complementary drain extended devices
TEXAS INSTRUMENTS INC0 citations61
US11764208B2Sep 19, 2023
Electrostatic discharge guard ring with snapback protection
TEXAS INSTRUMENTS INC0 citations61
US10950720B2Mar 16, 2021
Electrostatic discharge guard ring with complementary drain extended devices
TEXAS INSTRUMENTS INC0 citations61
US10896904B2Jan 19, 2021
ESD guard ring with snapback protection and lateral buried layers
TEXAS INSTRUMENTS INC0 citations61
US11322594B2May 3, 2022
Semiconductor device including a lateral insulator
TEXAS INSTRUMENTS INC0 citations58
US12563767B2Feb 24, 2026
Method for forming a field-effect transistor having a fractionally enhanced body structure
TEXAS INSTRUMENTS INC0 citations51
US11456381B2Sep 27, 2022
Drain-extended transistor
TEXAS INSTRUMENTS INC0 citations51
US10504885B2Dec 10, 2019
Electrostatic discharge guard ring with snapback protection
TEXAS INSTRUMENTS INC0 citations51
US10347621B2Jul 9, 2019
Electrostatic discharge guard ring with snapback protection
TEXAS INSTRUMENTS INC0 citations51
FAIRCHILD SEMICONDUCTOR
4 patentsUS9117845B2Aug 25, 2015
Production of laterally diffused oxide semiconductor (LDMOS) device and a bipolar junction transistor (BJT) device using a semiconductor process
FAIRCHILD SEMICONDUCTOR8 citations83
US8878275B2Nov 4, 2014
LDMOS device with double-sloped field plate
FAIRCHILD SEMICONDUCTOR7 citations83
US8987107B2Mar 24, 2015
Production of high-performance passive devices using existing operations of a semiconductor process
FAIRCHILD SEMICONDUCTOR1 citations51
US8822296B2Sep 2, 2014
Use of plate oxide layers to increase bulk oxide thickness in semiconductor devices
FAIRCHILD SEMICONDUCTOR0 citations50