Inventor
KANETA HIROSHI
JP14 patents
⚠️ This page may combine multiple inventors who share the name “KANETA HIROSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
5 patentsUS5286658AFeb 15, 1994
Process for producing semiconductor device
FUJITSU LTD37 citations91
US4803884AFeb 14, 1989
Method for measuring lattice defects in semiconductor
FUJITSU LTD17 citations73
US5066599ANov 19, 1991
Silicon crystal oxygen evaluation method using fourier transform infrared spectroscopy (ftir) and semiconductor device fabrication method using the same
FUJITSU LTD15 citations69
US6528382B2Mar 4, 2003
Semiconductor device and method for fabricating the same
FUJITSU LTD9 citations67
US7906443B2Mar 15, 2011
Controlling oxygen precipitates in silicon wafers using infrared irradiation and heating
FUJITSU LTD0 citations43
NEC CORP
4 patentsUS7087344B2Aug 8, 2006
Battery module
NEC CORP24 citations92
US8017260B2Sep 13, 2011
Secondary battery having third terminal other than positive and negative electrode terminals and battery comprising it
NEC CORP16 citations82
US7700227B2Apr 20, 2010
Module
NEC CORP7 citations73
US7029789B2Apr 18, 2006
Flat-type cell and combined battery utilizing the same
NEC CORP8 citations73
GOTO TERUTAKA
2 patentsUS8215175B2Jul 10, 2012
Quantitative evaluation device of atomic vacancies existing in silicon wafer, method for the device, silicon wafer manufacturing method, and thin-film oscillator
GOTO TERUTAKA7 citations75
US8578777B2Nov 12, 2013
Method for quantitatively evaluating concentration of atomic vacancies existing in silicon wafer, method for manufacturing silicon wafer, and silicon wafer manufactured by the method for manufacturing silicon wafer
GOTO TERUTAKA0 citations33