P

Inventor

SEOK YONG-SIK

KR17 patents

Patents

17 patents
US5325334AJun 28, 1994

Column redundancy circuit for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD84 citations95
US5103166AApr 7, 1992

Semiconductor integrated circuit chip having an identification circuit therein

SAMSUNG ELECTRONICS CO LTD116 citations94
US5732029AMar 24, 1998

Method and circuit for testing memory cells in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD51 citations92
US5657280AAug 12, 1997

Defective cell repairing circuit and method of semiconductor memory device

SAMSUNG ELECTRONICS CO LTD48 citations92
US5590079ADec 31, 1996

Wafer burn-in test circuit of a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD47 citations92
US5402378AMar 28, 1995

Circuit for generating a clock signal to separate bit lines in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD53 citations92
US5396465AMar 7, 1995

Circuit for controlling isolation transistors in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD34 citations92
US5367489ANov 22, 1994

Voltage pumping circuit for semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD91 citations92
US5293559AMar 8, 1994

Semiconductor memory device having netlike power supply lines

SAMSUNG ELECTRONICS CO LTD29 citations92
US5255234AOct 19, 1993

Redundant means of a semiconductor memory device and method thereof

SAMSUNG ELECTRONICS CO LTD27 citations92
US6046624AApr 4, 2000

Internal power supply generating circuit for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD42 citations91
US5327389AJul 5, 1994

Semiconductor memory device having a block selection function with low power consumptions

SAMSUNG ELECTRONICS CO LTD20 citations91
US5274595ADec 28, 1993

Data transmission circuit with segmented input/output lines

SAMSUNG ELECTRONICS CO LTD22 citations90
US5687128ANov 11, 1997

Power supply voltage boosting circuit of semiconductor memory device

SAMSUNG ELECTRONICS CO LTD16 citations73
US5319605AJun 7, 1994

Arrangement of word line driver stage for semiconductor memory device

SAMSUNG ELECTRONICS CO LTD19 citations68
US6122698ASep 19, 2000

Data bus having conducting lines driven at multiple adjustable current levels to transfer multiple-bit data on each conducting line

SAMSUNG ELECTRONICS CO LTD2 citations62
US5991903ANov 23, 1999

Parallel bit test circuit for testing a semiconductor device in parallel bits

SAMSUNG ELECTRONICS CO LTD6 citations62