P

Inventor

IMAI KIYOTAKA

JP49 patents
⚠️ This page may combine multiple inventors who share the name “IMAI KIYOTAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

30 patents
US6222234B1Apr 24, 2001

Semiconductor device having partially and fully depleted SOI elements on a common substrate

NEC CORP147 citations99
US5506427AApr 9, 1996

Heterojunction bipolar transistor with silicon-germanium base

NEC CORP105 citations98
US5834825ANov 10, 1998

Semiconductor device having spiral wiring directly covered with an insulating layer containing ferromagnetic particles

NEC CORP75 citations96
US5494836AFeb 27, 1996

Process of producing heterojunction bipolar transistor with silicon-germanium base

NEC CORP92 citations96
US5376816ADec 27, 1994

Bi-cmos integrated circuit device having buried region use in common for bipolar and mos transistors

NEC CORP82 citations94
US6573027B1Jun 3, 2003

Manufacturing method of semiconductor device

NEC CORP22 citations93
US6337248B1Jan 8, 2002

Process for manufacturing semiconductor devices

NEC CORP35 citations93
US6160291ADec 12, 2000

SOI-MOS field effect transistor with improved source/drain structure

NEC CORP17 citations93
US5872039AFeb 16, 1999

Semiconductor device and manufacturing method of the same

NEC CORP24 citations93
US5648279AJul 15, 1997

Method of manufacturing bipolar transistor having emitter region and external base region formed in self alignment manner

NEC CORP28 citations93
US5523245AJun 4, 1996

Process for fabricating high-performance facet-free small-sized bipolar transistor

NEC CORP37 citations93
US5424228AJun 13, 1995

Method for fabricating a bipolar transistor with reduced base resistance

NEC CORP20 citations93
US6342413B1Jan 29, 2002

Method of manufacturing semiconductor device

NEC CORP25 citations92
US5302535AApr 12, 1994

Method of manufacturing high speed bipolar transistor

NEC CORP27 citations92
US6368754B1Apr 9, 2002

Reticle used for fabrication of semiconductor device

NEC CORP14 citations84
US5508537AApr 16, 1996

Bipolar transistor with particular base structure

NEC CORP19 citations84
US6489236B1Dec 3, 2002

Method for manufacturing a semiconductor device having a silicide layer

NEC CORP9 citations74
US6461907B2Oct 8, 2002

Semiconductor device and fabrication method

NEC CORP11 citations74
US6297529B1Oct 2, 2001

Semiconductor device with multilayered gate structure

NEC CORP12 citations74
US6194261B1Feb 27, 2001

High yield semiconductor device and method of fabricating the same

NEC CORP8 citations74
US6160293ADec 12, 2000

Sub-quarter micron silicon-on-insulator MOS field effect transistor with deep silicide contact layers

NEC CORP7 citations74
US6031271AFeb 29, 2000

High yield semiconductor device and method of fabricating the same

NEC CORP8 citations74
US5569611AOct 29, 1996

Method of manufacturing a bipolar transistor operating at low temperature

NEC CORP13 citations74
US6664148B2Dec 16, 2003

Integrated circuit device with switching between active mode and standby mode controlled by digital circuit

NEC CORP7 citations73
US6388504B1May 14, 2002

Integrated circuit device with switching between active mode and standby mode controlled by digital circuit

NEC CORP12 citations73
US6472714B1Oct 29, 2002

Semiconductor device in which memory cells and peripheral circuits are provided on the same circuit

NEC CORP3 citations63
US6274476B1Aug 14, 2001

Semiconductor device and method of manufacturing the same

NEC CORP4 citations63
US6150202ANov 21, 2000

Method for fabricating semiconductor device

NEC CORP4 citations63
US7238996B2Jul 3, 2007

Semiconductor device

NEC CORP4 citations62
US10536401B2Jan 14, 2020

Communication device, communication system and communication method

NEC CORP0 citations42

NEC ELECTRONICS CORP

6 patents

HORIZON CO

4 patents

NIPPON KOKAN KK

3 patents

TOKYO ELECTRON LTD

2 patents

(unassigned)

1 patent

SAMSUNG ELECTRONICS CO LTD

1 patent

SAKAKIDANI AKIHITO

1 patent

IMAI KIYOTAKA

1 patent