Inventor
IMAI KIYOTAKA
JP49 patents
⚠️ This page may combine multiple inventors who share the name “IMAI KIYOTAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
30 patentsUS6222234B1Apr 24, 2001
Semiconductor device having partially and fully depleted SOI elements on a common substrate
NEC CORP147 citations99
US5506427AApr 9, 1996
Heterojunction bipolar transistor with silicon-germanium base
NEC CORP105 citations98
US5834825ANov 10, 1998
Semiconductor device having spiral wiring directly covered with an insulating layer containing ferromagnetic particles
NEC CORP75 citations96
US5494836AFeb 27, 1996
Process of producing heterojunction bipolar transistor with silicon-germanium base
NEC CORP92 citations96
US5376816ADec 27, 1994
Bi-cmos integrated circuit device having buried region use in common for bipolar and mos transistors
NEC CORP82 citations94
US6573027B1Jun 3, 2003
Manufacturing method of semiconductor device
NEC CORP22 citations93
US6337248B1Jan 8, 2002
Process for manufacturing semiconductor devices
NEC CORP35 citations93
US6160291ADec 12, 2000
SOI-MOS field effect transistor with improved source/drain structure
NEC CORP17 citations93
US5872039AFeb 16, 1999
Semiconductor device and manufacturing method of the same
NEC CORP24 citations93
US5648279AJul 15, 1997
Method of manufacturing bipolar transistor having emitter region and external base region formed in self alignment manner
NEC CORP28 citations93
US5523245AJun 4, 1996
Process for fabricating high-performance facet-free small-sized bipolar transistor
NEC CORP37 citations93
US5424228AJun 13, 1995
Method for fabricating a bipolar transistor with reduced base resistance
NEC CORP20 citations93
US6342413B1Jan 29, 2002
Method of manufacturing semiconductor device
NEC CORP25 citations92
US5302535AApr 12, 1994
Method of manufacturing high speed bipolar transistor
NEC CORP27 citations92
US6368754B1Apr 9, 2002
Reticle used for fabrication of semiconductor device
NEC CORP14 citations84
US5508537AApr 16, 1996
Bipolar transistor with particular base structure
NEC CORP19 citations84
US6489236B1Dec 3, 2002
Method for manufacturing a semiconductor device having a silicide layer
NEC CORP9 citations74
US6461907B2Oct 8, 2002
Semiconductor device and fabrication method
NEC CORP11 citations74
US6297529B1Oct 2, 2001
Semiconductor device with multilayered gate structure
NEC CORP12 citations74
US6194261B1Feb 27, 2001
High yield semiconductor device and method of fabricating the same
NEC CORP8 citations74
US6160293ADec 12, 2000
Sub-quarter micron silicon-on-insulator MOS field effect transistor with deep silicide contact layers
NEC CORP7 citations74
US6031271AFeb 29, 2000
High yield semiconductor device and method of fabricating the same
NEC CORP8 citations74
US5569611AOct 29, 1996
Method of manufacturing a bipolar transistor operating at low temperature
NEC CORP13 citations74
US6664148B2Dec 16, 2003
Integrated circuit device with switching between active mode and standby mode controlled by digital circuit
NEC CORP7 citations73
US6388504B1May 14, 2002
Integrated circuit device with switching between active mode and standby mode controlled by digital circuit
NEC CORP12 citations73
US6472714B1Oct 29, 2002
Semiconductor device in which memory cells and peripheral circuits are provided on the same circuit
NEC CORP3 citations63
US6274476B1Aug 14, 2001
Semiconductor device and method of manufacturing the same
NEC CORP4 citations63
US6150202ANov 21, 2000
Method for fabricating semiconductor device
NEC CORP4 citations63
US7238996B2Jul 3, 2007
Semiconductor device
NEC CORP4 citations62
US10536401B2Jan 14, 2020
Communication device, communication system and communication method
NEC CORP0 citations42
NEC ELECTRONICS CORP
6 patentsUS6756676B2Jun 29, 2004
Semiconductor device and method of manufacturing the same
NEC ELECTRONICS CORP6 citations74
US7157322B2Jan 2, 2007
Semiconductor device and method for manufacturing same
NEC ELECTRONICS CORP2 citations63
US7759744B2Jul 20, 2010
Semiconductor device having high dielectric constant layers of different thicknesses
NEC ELECTRONICS CORP4 citations62
US7754570B2Jul 13, 2010
Semiconductor device
NEC ELECTRONICS CORP2 citations62
US6627490B2Sep 30, 2003
Semiconductor device and method for fabricating the same
NEC ELECTRONICS CORP0 citations52
US7102183B2Sep 5, 2006
MOS transistor
NEC ELECTRONICS CORP0 citations41
HORIZON CO
4 patentsNIPPON KOKAN KK
3 patentsUS5081658AJan 14, 1992
Method of measuring plating amount and plating film composition of plated steel plate and apparatus therefor
NIPPON KOKAN KK29 citations91
US4643587AFeb 17, 1987
Temperature data producing apparatus for high temperature moving objects
NIPPON KOKAN KK7 citations70
US4553854ANov 19, 1985
Method for continuously measuring surface temperature of heated steel strip
NIPPON KOKAN KK6 citations63