Inventor

PARK SHEUNG HEE

KR19 patents

⚠️ This page may combine multiple inventors who share the name “PARK SHEUNG HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK SHEUNG HEE

SPANSION LLC

Repetitive erase verify technique for flash memory devices

Flash memory with buried bit lines

Positive gate stress during erase to improve retention in multi-level, non-volatile flash memory

Ramp gate erase for dual bit flash memory

Cycling improvement using higher erase bias

Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory

Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory

ADVANCED MICRO DEVICES INC

Programming of a flash memory cell

Flash memory device with increase of efficiency during an APDE (automatic program disturb after erase) process

Reading flash memory

Flash memory cell having reduced leakage current

Method of programming memory cells

Ramped soft programming for control of erase voltage distributions in flash memory devices

Method of programming a memory cell

HYUNDAI ELECTRONICS IND

Method of programming a flash memory cell

Address buffer in a flash memory

Code addressable memory cell in a flash memory device

Memory cell array having improved channel characteristics

SPANSION L L C

Flash memory device having increased over-erase correction efficiency and robustness against device variations