Inventor
HO TZU-EN
TW9 patents
Patents
9 patentsUS6737334B2May 18, 2004
Method of fabricating a shallow trench isolation structure
NANYA TECHNOLOGY CORP26 citations92
US7101777B2Sep 5, 2006
Methods for manufacturing stacked gate structure and field effect transistor provided with the same
NANYA TECHNOLOGY CORP11 citations83
US6858516B2Feb 22, 2005
Manufacturing method of a high aspect ratio shallow trench isolation region
NANYA TECHNOLOGY CORP10 citations72
US6833311B2Dec 21, 2004
Manufacturing method for a shallow trench isolation region with high aspect ratio
NANYA TECHNOLOGY CORP11 citations72
US7375017B2May 20, 2008
Method for fabricating semiconductor device having stacked-gate structure
NANYA TECHNOLOGY CORP3 citations62
US7022603B2Apr 4, 2006
Method for fabricating semiconductor device having stacked-gate structure
NANYA TECHNOLOGY CORP2 citations62
US6743728B2Jun 1, 2004
Method for forming shallow trench isolation
NANYA TECHNOLOGY CORP5 citations61
US6958283B2Oct 25, 2005
Method for fabricating trench isolation
NANYA TECHNOLOGY CORP0 citations49
US6794270B2Sep 21, 2004
Method for shallow trench isolation fabrication and partial oxide layer removal
NANYA TECHNOLOGY CORP1 citations48