Inventor
YANG ZHIHONG
US30 patents
⚠️ This page may combine multiple inventors who share the name “YANG ZHIHONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PALO ALTO RES CT INC
16 patentsUS7547925B2Jun 16, 2009
Superlattice strain relief layer for semiconductor devices
PALO ALTO RES CT INC116 citations97
US9444224B2Sep 13, 2016
Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer
PALO ALTO RES CT INC20 citations92
US8000366B2Aug 16, 2011
Laser diode with high indium active layer and lattice matched cladding layer
PALO ALTO RES CT INC21 citations92
US8964796B2Feb 24, 2015
Structure for electron-beam pumped edge-emitting device and methods for producing same
PALO ALTO RES CT INC9 citations84
US7856040B2Dec 21, 2010
Semiconductor light emitting devices with non-epitaxial upper cladding
PALO ALTO RES CT INC10 citations84
US7714340B2May 11, 2010
Nitride light-emitting device
PALO ALTO RES CT INC14 citations84
US10249786B2Apr 2, 2019
Thin film and substrate-removed group III-nitride based devices and method
PALO ALTO RES CT INC2 citations73
US8023544B2Sep 20, 2011
Semiconductor light emitting devices with non-epitaxial upper cladding
PALO ALTO RES CT INC3 citations63
US12366815B2Jul 22, 2025
Focusing optics for use with semiconductor lasers for imaging applications
PALO ALTO RES CT INC0 citations62
US11827037B2Nov 28, 2023
Semiconductor array imager for printing systems
PALO ALTO RES CT INC0 citations62
US10164146B2Dec 25, 2018
P-side layers for short wavelength light emitters
PALO ALTO RES CT INC0 citations52
US8354689B2Jan 15, 2013
Light emitting devices having dopant front loaded tunnel barrier layers
PALO ALTO RES CT INC0 citations52
US7718455B2May 18, 2010
Method of forming a buried aperture nitride light emitting device
PALO ALTO RES CT INC0 citations52
US12562552B2Feb 24, 2026
Independently-addressable high power surface-emitting laser array with tight-pitch packing
PALO ALTO RES CT INC0 citations51
US8048703B2Nov 1, 2011
Light emitting devices with inhomogeneous quantum well active regions
PALO ALTO RES CT INC0 citations50
US7723719B2May 25, 2010
Light emitting devices with inhomogeneous quantum well active regions
PALO ALTO RES CT INC0 citations50
CHUA CHRISTOPHER L
5 patentsUS8513643B2Aug 20, 2013
Mixed alloy defect redirection region and devices including same
CHUA CHRISTOPHER L3 citations62
US8183649B2May 22, 2012
Buried aperture nitride light-emitting device
CHUA CHRISTOPHER L1 citations51
US8143154B2Mar 27, 2012
Relaxed InGaN/AlGaN templates
CHUA CHRISTOPHER L0 citations50
US8143647B2Mar 27, 2012
Relaxed InGaN/AlGaN templates
CHUA CHRISTOPHER L1 citations50
US8822314B2Sep 2, 2014
Method of growing epitaxial layers on a substrate
CHUA CHRISTOPHER L0 citations49