Inventor
RUI YING
US15 patents
⚠️ This page may combine multiple inventors who share the name “RUI YING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
6 patentsUS7320942B2Jan 22, 2008
Method for removal of metallic residue after plasma etching of a metal layer
APPLIED MATERIALS INC19 citations92
US7972968B2Jul 5, 2011
High density plasma gapfill deposition-etch-deposition process etchant
APPLIED MATERIALS INC9 citations84
US7967996B2Jun 28, 2011
Process for wafer backside polymer removal and wafer front side photoresist removal
APPLIED MATERIALS INC16 citations84
US7879183B2Feb 1, 2011
Apparatus and method for front side protection during backside cleaning
APPLIED MATERIALS INC13 citations83
US10648074B2May 12, 2020
Physical vapor deposition with isotropic neutral and non-isotropic ion velocity distribution at the wafer surface
APPLIED MATERIALS INC2 citations73
US10400328B2Sep 3, 2019
Physical vapor deposition system with a source of isotropic ion velocity distribution at the wafer surface
APPLIED MATERIALS INC0 citations52
HOFFMAN DANIEL J
3 patentsUS8070925B2Dec 6, 2011
Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
HOFFMAN DANIEL J36 citations92
US9593411B2Mar 14, 2017
Physical vapor deposition chamber with capacitive tuning at wafer support
HOFFMAN DANIEL J8 citations83
US9856558B2Jan 2, 2018
Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface
HOFFMAN DANIEL J3 citations72
MICRON TECHNOLOGY INC
3 patentsUS10971500B2Apr 6, 2021
Methods used in the fabrication of integrated circuitry
MICRON TECHNOLOGY INC1 citations62
US11011378B2May 18, 2021
Atom implantation for reduction of compressive stress
MICRON TECHNOLOGY INC0 citations59
US11189484B2Nov 30, 2021
Semiconductor nitridation passivation
MICRON TECHNOLOGY INC0 citations58