Inventor
FUJIWARA HIROKAZU
JP20 patents
⚠️ This page may combine multiple inventors who share the name “FUJIWARA HIROKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJIWARA HIROKAZU
6 patentsUS8748975B2Jun 10, 2014
Switching element and manufacturing method thereof
FUJIWARA HIROKAZU7 citations83
US8440524B2May 14, 2013
Semiconductor device manufacturing method
FUJIWARA HIROKAZU14 citations83
US9201094B2Dec 1, 2015
Wafer examination device and wafer examination method
FUJIWARA HIROKAZU3 citations61
US8216667B2Jul 10, 2012
Tantalum carbide-coated carbon material and production method thereof
FUJIWARA HIROKAZU5 citations60
US8164100B2Apr 24, 2012
Semiconductor device and method of manufacturing thereof
FUJIWARA HIROKAZU1 citations51
US9607836B2Mar 28, 2017
Semiconductor device and manufacturing method of semiconductor device
FUJIWARA HIROKAZU0 citations40
TOYOTA MOTOR CO LTD
3 patentsUS9954096B2Apr 24, 2018
Switching device and method of manufacturing the same
TOYOTA MOTOR CO LTD5 citations73
US7855131B2Dec 21, 2010
Manufacturing method of a semiconductor device
TOYOTA MOTOR CO LTD4 citations62
US9899469B2Feb 20, 2018
Semiconductor device and manufacturing method thereof
TOYOTA MOTOR CO LTD0 citations41
SAITO JUN
3 patentsUS9853141B2Dec 26, 2017
Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes
SAITO JUN2 citations72
US9780205B2Oct 3, 2017
Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereof
SAITO JUN3 citations72
US10020390B2Jul 10, 2018
Semiconductor device and semiconductor device manufacturing method
SAITO JUN0 citations40