Inventor

NOGUCHI MITSUHIRO

JP143 patents

⚠️ This page may combine multiple inventors who share the name “NOGUCHI MITSUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NOGUCHI MITSUHIRO

TOSHIBA KK

Nonvolatile semiconductor memory device

Semiconductor memory device

Semiconductor memory

Semiconductor memory

Nonvolatile semiconductor memory device

Data writing method for semiconductor memory device and semiconductor memory device

Semiconductor memory

Semiconductor device having two-layered charge storage electrode

Semiconductor memory having transistors connected in series

MISFET semiconductor device having relative impurity concentration levels between layers

Semiconductor device

Semiconductor device

Nonvolatile semiconductor memory

Semiconductor memory device

Data storage system

Data writing method for semiconductor memory device and semiconductor memory device

Magnetic storage device using unipole currents for selecting memory cells

Semiconductor memory device

Semiconductor device having two-layered charge storage electrode

MIS transistor having a large driving current and method for producing the same

Semiconductor memory device and manufacturing method thereof

Semiconductor memory

Data storage system with enhanced reliability with respect to data destruction caused by reading-out of the data

Data memory system

Semiconductor device having two-layered charge storage electrode

Semiconductor device and method of manufacturing the same

Semiconductor memory device

Semiconductor device having two-layered charge storage electrode

Semiconductor device and method of fabricating the same

Semiconductor device with source line and fabrication method thereof

Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems

Semiconductor memory device

Semiconductor device with trench isolation between two regions having different gate insulating films

Semiconductor memory

Data writing method for semiconductor memory device and semiconductor memory device

Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio

Field effect transistor with reduced narrow channel effect

Semiconductor with multilayer metal structure using copper that offer high speed performance

Semiconductor with multilayer wiring structure that offer high speed performance

Non-volatile semiconductor memory device

Semiconductor device

Field effect transistor with reduced narrow channel effect

Semiconductor device

Semiconductor device and method of manufacture of the same

Non-volatile semiconductor storage device

Nonvolatile semiconductor memory and method for fabricating the same

Nonvolatile semiconductor memory

MITSUBISHI HEAVY IND LTD

Gas turbine and method of bleeding gas therefrom

HITACHI ULSI SYS CO LTD

Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device

CHAKIHARA HIRAKU

Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device