Inventor
FRANKLIN AARON D
US42 patents
⚠️ This page may combine multiple inventors who share the name “FRANKLIN AARON D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
22 patentsUS9040364B2May 26, 2015
Carbon nanotube devices with unzipped low-resistance contacts
IBM16 citations93
US8609481B1Dec 17, 2013
Gate-all-around carbon nanotube transistor with selectively doped spacers
IBM26 citations92
US8809837B2Aug 19, 2014
Vertical stacking of graphene in a field-effect transistor
IBM16 citations91
US9543535B1Jan 10, 2017
Self-aligned carbon nanotube transistor including source/drain extensions and top gate
IBM6 citations84
US9508801B2Nov 29, 2016
Stacked graphene field-effect transistor
IBM6 citations84
US9246112B2Jan 26, 2016
Semiconductor device with ballistic gate length structure
IBM6 citations84
US9123454B2Sep 1, 2015
Device for electrical characterization of molecules using CNT-nanoparticle-molecule-nanoparticle-CNT structure
IBM10 citations84
US9105702B2Aug 11, 2015
Transistors from vertical stacking of carbon nanotube thin films
IBM10 citations84
US9099542B2Aug 4, 2015
Transistors from vertical stacking of carbon nanotube thin films
IBM12 citations84
US9029841B2May 12, 2015
Carbon nanotube devices with unzipped low-resistance contacts
IBM11 citations84
US9000499B2Apr 7, 2015
Gate-all-around carbon nanotube transistor with selectively doped spacers
IBM13 citations84
US8968582B2Mar 3, 2015
Device for electrical characterization of molecules using CNT-nanoparticle-molecule-nanoparticle-CNT structure
IBM10 citations84
US8803132B2Aug 12, 2014
Self-aligned double-gate graphene transistor
IBM13 citations84
US8796096B2Aug 5, 2014
Self-aligned double-gate graphene transistor
IBM9 citations84
US8765547B2Jul 1, 2014
Area-efficient capacitor using carbon nanotubes
IBM14 citations84
US8766345B2Jul 1, 2014
Area-efficient capacitor using carbon nanotubes
IBM11 citations84
US8932919B2Jan 13, 2015
Vertical stacking of graphene in a field-effect transistor
IBM13 citations82
US9786852B2Oct 10, 2017
Semiconductor device with ballistic gate length structure
IBM3 citations73
US9711613B2Jul 18, 2017
Stacked graphene field-effect transistor
IBM2 citations73
US9977002B2May 22, 2018
Nanoporous structures by reactive ion etching
IBM1 citations52
US9543534B1Jan 10, 2017
Self-aligned carbon nanotube transistor including source/drain extensions and top gate
IBM0 citations52
US9117652B2Aug 25, 2015
Nanoporous structures by reactive ion etching
IBM0 citations52
FRANKLIN AARON D
4 patentsUS8741756B2Jun 3, 2014
Contacts-first self-aligned carbon nanotube transistor with gate-all-around
FRANKLIN AARON D14 citations83
US8674412B2Mar 18, 2014
Contacts-first self-aligned carbon nanotube transistor with gate-all-around
FRANKLIN AARON D14 citations83
US8872154B2Oct 28, 2014
Field effect transistor fabrication from carbon nanotubes
FRANKLIN AARON D8 citations82
US9487877B2Nov 8, 2016
Contact metallization of carbon nanotubes
FRANKLIN AARON D1 citations49
UNIV DUKE
4 patentsUS9797703B2Oct 24, 2017
Non-invasive thickness measurement using resonant frequency shift
UNIV DUKE7 citations80
US10209054B2Feb 19, 2019
Non-invasive thickness measurement using capacitance measurement
UNIV DUKE2 citations67
US11940478B2Mar 26, 2024
Electronic device characterization systems and methods
UNIV DUKE1 citations51
US12546763B2Feb 10, 2026
Prothrombin time sensor
UNIV DUKE0 citations38
DIMITRAKOPOULOS CHRISTOS D
3 patentsUS8772098B2Jul 8, 2014
Transport conduits for contacts to graphene
DIMITRAKOPOULOS CHRISTOS D4 citations73
US8637850B2Jan 28, 2014
Transport conduits for contacts to graphene
DIMITRAKOPOULOS CHRISTOS D0 citations52
US8685844B2Apr 1, 2014
Sub-10 nm graphene nanoribbon lattices
DIMITRAKOPOULOS CHRISTOS D0 citations42