P

Inventor

FRANKLIN AARON D

US42 patents
⚠️ This page may combine multiple inventors who share the name “FRANKLIN AARON D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

22 patents
US9040364B2May 26, 2015

Carbon nanotube devices with unzipped low-resistance contacts

IBM16 citations93
US8609481B1Dec 17, 2013

Gate-all-around carbon nanotube transistor with selectively doped spacers

IBM26 citations92
US8809837B2Aug 19, 2014

Vertical stacking of graphene in a field-effect transistor

IBM16 citations91
US9543535B1Jan 10, 2017

Self-aligned carbon nanotube transistor including source/drain extensions and top gate

IBM6 citations84
US9508801B2Nov 29, 2016

Stacked graphene field-effect transistor

IBM6 citations84
US9246112B2Jan 26, 2016

Semiconductor device with ballistic gate length structure

IBM6 citations84
US9123454B2Sep 1, 2015

Device for electrical characterization of molecules using CNT-nanoparticle-molecule-nanoparticle-CNT structure

IBM10 citations84
US9105702B2Aug 11, 2015

Transistors from vertical stacking of carbon nanotube thin films

IBM10 citations84
US9099542B2Aug 4, 2015

Transistors from vertical stacking of carbon nanotube thin films

IBM12 citations84
US9029841B2May 12, 2015

Carbon nanotube devices with unzipped low-resistance contacts

IBM11 citations84
US9000499B2Apr 7, 2015

Gate-all-around carbon nanotube transistor with selectively doped spacers

IBM13 citations84
US8968582B2Mar 3, 2015

Device for electrical characterization of molecules using CNT-nanoparticle-molecule-nanoparticle-CNT structure

IBM10 citations84
US8803132B2Aug 12, 2014

Self-aligned double-gate graphene transistor

IBM13 citations84
US8796096B2Aug 5, 2014

Self-aligned double-gate graphene transistor

IBM9 citations84
US8765547B2Jul 1, 2014

Area-efficient capacitor using carbon nanotubes

IBM14 citations84
US8766345B2Jul 1, 2014

Area-efficient capacitor using carbon nanotubes

IBM11 citations84
US8932919B2Jan 13, 2015

Vertical stacking of graphene in a field-effect transistor

IBM13 citations82
US9786852B2Oct 10, 2017

Semiconductor device with ballistic gate length structure

IBM3 citations73
US9711613B2Jul 18, 2017

Stacked graphene field-effect transistor

IBM2 citations73
US9977002B2May 22, 2018

Nanoporous structures by reactive ion etching

IBM1 citations52
US9543534B1Jan 10, 2017

Self-aligned carbon nanotube transistor including source/drain extensions and top gate

IBM0 citations52
US9117652B2Aug 25, 2015

Nanoporous structures by reactive ion etching

IBM0 citations52

FRANKLIN AARON D

4 patents

UNIV DUKE

4 patents

DIMITRAKOPOULOS CHRISTOS D

3 patents

CHEN ZHIHONG

2 patents

CAO QING

2 patents

FARMER DAMON B

2 patents

GLOBALFOUNDRIES INC

2 patents

CLAUSSEN JONATHAN CLAY

1 patent