Inventor
CAMILLO-CASTILLO RENATA
US41 patents
⚠️ This page may combine multiple inventors who share the name “CAMILLO-CASTILLO RENATA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
16 patentsUS9224858B1Dec 29, 2015
Lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) with a below source isolation region and a method of forming the LDMOSFET
IBM20 citations93
US9159817B2Oct 13, 2015
Heterojunction bipolar transistors with an airgap between the extrinsic base and collector
IBM14 citations84
US9070734B2Jun 30, 2015
Heterojunction bipolar transistors with reduced parasitic capacitance
IBM7 citations84
US8716837B2May 6, 2014
Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases
IBM5 citations84
US10431654B2Oct 1, 2019
Extrinsic base doping for bipolar junction transistors
IBM3 citations73
US9111986B2Aug 18, 2015
Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base
IBM4 citations73
US11152467B2Oct 19, 2021
Extrinsic base doping for bipolar junction transistors
IBM0 citations63
US8957456B1Feb 17, 2015
Heterojunction bipolar transistors with reduced parasitic capacitance
IBM2 citations62
US10784346B2Sep 22, 2020
Extrinsic base doping for bipolar junction transistors
IBM0 citations52
US9263782B2Feb 16, 2016
Notch filter structure with open stubs in semiconductor substrate and design structure
IBM0 citations52
US9159801B2Oct 13, 2015
Bipolar junction transistor with multiple emitter fingers
IBM0 citations52
US9034712B2May 19, 2015
Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltage
IBM1 citations52
US8975146B2Mar 10, 2015
Trench isolation structures and methods for bipolar junction transistors
IBM1 citations52
US8946799B2Feb 3, 2015
Silicon controlled rectifier with stress-enhanced adjustable trigger voltage
IBM1 citations52
US7791105B2Sep 7, 2010
Device structures for a high voltage junction field effect transistor manufactured using a hybrid orientation technology wafer and design structures for a high voltage integrated circuit
IBM0 citations52
US9257324B2Feb 9, 2016
Forming structures on resistive substrates
IBM0 citations51
GLOBALFOUNDRIES INC
15 patentsUS9245951B1Jan 26, 2016
Profile control over a collector of a bipolar junction transistor
GLOBALFOUNDRIES INC20 citations92
US9722057B2Aug 1, 2017
Bipolar junction transistors with a buried dielectric region in the active device region
GLOBALFOUNDRIES INC9 citations84
US9318551B2Apr 19, 2016
Trench isolation structures and methods for bipolar junction transistors
GLOBALFOUNDRIES INC7 citations84
US10446644B2Oct 15, 2019
Device structures for a silicon-on-insulator substrate with a high-resistance handle wafer
GLOBALFOUNDRIES INC2 citations73
US10367083B2Jul 30, 2019
Compact device structures for a bipolar junction transistor
GLOBALFOUNDRIES INC5 citations73
US10014397B1Jul 3, 2018
Bipolar junction transistors with a combined vertical-lateral architecture
GLOBALFOUNDRIES INC6 citations73
US9653566B2May 16, 2017
Bipolar junction transistors with an air gap in the shallow trench isolation
GLOBALFOUNDRIES INC3 citations73
US9608096B1Mar 28, 2017
Implementing stress in a bipolar junction transistor
GLOBALFOUNDRIES INC6 citations73
US9583569B2Feb 28, 2017
Profile control over a collector of a bipolar junction transistor
GLOBALFOUNDRIES INC2 citations73
US9231074B2Jan 5, 2016
Bipolar junction transistors with an air gap in the shallow trench isolation
GLOBALFOUNDRIES INC3 citations73
US9721949B1Aug 1, 2017
Method of forming super steep retrograde wells on FinFET
GLOBALFOUNDRIES INC3 citations69
US9496377B2Nov 15, 2016
Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base
GLOBALFOUNDRIES INC2 citations63
US9219128B2Dec 22, 2015
Methods of fabricating bipolar junction transistors with reduced epitaxial base facets effect for low parasitic collector-base capacitance
GLOBALFOUNDRIES INC0 citations52
US10170553B2Jan 1, 2019
Shaped terminals for a bipolar junction transistor
GLOBALFOUNDRIES INC0 citations42
US9812447B2Nov 7, 2017
Bipolar junction transistors with extrinsic device regions free of trench isolation
GLOBALFOUNDRIES INC0 citations41
CAMILLO-CASTILLO RENATA
8 patentsUS8536012B2Sep 17, 2013
Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases
CAMILLO-CASTILLO RENATA13 citations84
US8405186B2Mar 26, 2013
Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the structure
CAMILLO-CASTILLO RENATA7 citations83
US8598660B2Dec 3, 2013
Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltage
CAMILLO-CASTILLO RENATA7 citations81
US9059138B2Jun 16, 2015
Heterojunction bipolar transistor with reduced sub-collector length, method of manufacture and design structure
CAMILLO-CASTILLO RENATA2 citations62
US8338863B2Dec 25, 2012
Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance
CAMILLO-CASTILLO RENATA3 citations62
US8232156B2Jul 31, 2012
Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance
CAMILLO-CASTILLO RENATA4 citations62
US8586423B2Nov 19, 2013
Silicon controlled rectifier with stress-enhanced adjustable trigger voltage
CAMILLO-CASTILLO RENATA3 citations61
US8916446B2Dec 23, 2014
Bipolar junction transistor with multiple emitter fingers
CAMILLO-CASTILLO RENATA1 citations52