P

Inventor

CAMILLO-CASTILLO RENATA

US41 patents
⚠️ This page may combine multiple inventors who share the name “CAMILLO-CASTILLO RENATA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

16 patents
US9224858B1Dec 29, 2015

Lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) with a below source isolation region and a method of forming the LDMOSFET

IBM20 citations93
US9159817B2Oct 13, 2015

Heterojunction bipolar transistors with an airgap between the extrinsic base and collector

IBM14 citations84
US9070734B2Jun 30, 2015

Heterojunction bipolar transistors with reduced parasitic capacitance

IBM7 citations84
US8716837B2May 6, 2014

Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases

IBM5 citations84
US10431654B2Oct 1, 2019

Extrinsic base doping for bipolar junction transistors

IBM3 citations73
US9111986B2Aug 18, 2015

Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base

IBM4 citations73
US11152467B2Oct 19, 2021

Extrinsic base doping for bipolar junction transistors

IBM0 citations63
US8957456B1Feb 17, 2015

Heterojunction bipolar transistors with reduced parasitic capacitance

IBM2 citations62
US10784346B2Sep 22, 2020

Extrinsic base doping for bipolar junction transistors

IBM0 citations52
US9263782B2Feb 16, 2016

Notch filter structure with open stubs in semiconductor substrate and design structure

IBM0 citations52
US9159801B2Oct 13, 2015

Bipolar junction transistor with multiple emitter fingers

IBM0 citations52
US9034712B2May 19, 2015

Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltage

IBM1 citations52
US8975146B2Mar 10, 2015

Trench isolation structures and methods for bipolar junction transistors

IBM1 citations52
US8946799B2Feb 3, 2015

Silicon controlled rectifier with stress-enhanced adjustable trigger voltage

IBM1 citations52
US7791105B2Sep 7, 2010

Device structures for a high voltage junction field effect transistor manufactured using a hybrid orientation technology wafer and design structures for a high voltage integrated circuit

IBM0 citations52
US9257324B2Feb 9, 2016

Forming structures on resistive substrates

IBM0 citations51

GLOBALFOUNDRIES INC

15 patents
US9245951B1Jan 26, 2016

Profile control over a collector of a bipolar junction transistor

GLOBALFOUNDRIES INC20 citations92
US9722057B2Aug 1, 2017

Bipolar junction transistors with a buried dielectric region in the active device region

GLOBALFOUNDRIES INC9 citations84
US9318551B2Apr 19, 2016

Trench isolation structures and methods for bipolar junction transistors

GLOBALFOUNDRIES INC7 citations84
US10446644B2Oct 15, 2019

Device structures for a silicon-on-insulator substrate with a high-resistance handle wafer

GLOBALFOUNDRIES INC2 citations73
US10367083B2Jul 30, 2019

Compact device structures for a bipolar junction transistor

GLOBALFOUNDRIES INC5 citations73
US10014397B1Jul 3, 2018

Bipolar junction transistors with a combined vertical-lateral architecture

GLOBALFOUNDRIES INC6 citations73
US9653566B2May 16, 2017

Bipolar junction transistors with an air gap in the shallow trench isolation

GLOBALFOUNDRIES INC3 citations73
US9608096B1Mar 28, 2017

Implementing stress in a bipolar junction transistor

GLOBALFOUNDRIES INC6 citations73
US9583569B2Feb 28, 2017

Profile control over a collector of a bipolar junction transistor

GLOBALFOUNDRIES INC2 citations73
US9231074B2Jan 5, 2016

Bipolar junction transistors with an air gap in the shallow trench isolation

GLOBALFOUNDRIES INC3 citations73
US9721949B1Aug 1, 2017

Method of forming super steep retrograde wells on FinFET

GLOBALFOUNDRIES INC3 citations69
US9496377B2Nov 15, 2016

Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base

GLOBALFOUNDRIES INC2 citations63
US9219128B2Dec 22, 2015

Methods of fabricating bipolar junction transistors with reduced epitaxial base facets effect for low parasitic collector-base capacitance

GLOBALFOUNDRIES INC0 citations52
US10170553B2Jan 1, 2019

Shaped terminals for a bipolar junction transistor

GLOBALFOUNDRIES INC0 citations42
US9812447B2Nov 7, 2017

Bipolar junction transistors with extrinsic device regions free of trench isolation

GLOBALFOUNDRIES INC0 citations41

CAMILLO-CASTILLO RENATA

8 patents

GLOBALFOUNDARIES INC

1 patent

BOTULA ALAN B

1 patent