Inventor

HARAME DAVID L

US80 patents

⚠️ This page may combine multiple inventors who share the name “HARAME DAVID L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HARAME DAVID L

IBM

Diffused extrinsic base and method for fabrication

High performance vertical bipolar transistor structure via self-aligning processing techniques

Isolation technique for silicon germanium devices

Complementary bipolar transistor structure and method for manufacture

Structure and method for performance improvement in vertical bipolar transistors

Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology

Method for controlling silicon etch depth

Isolation technique for silicon germanium devices

Bipolar transistor with ultra-thin epitaxial base and method of fabricating same

Method of fabricating a bipolar transistor with ultra-thin epitaxial base

Method for fabricating shallow junctions by preamorphizing with dopant of same conductivity as substrate

Epitaxial base bipolar transistor with raised extrinsic base

Graded bandgap single-crystal emitter heterojunction bipolar transistor

Bipolar junction transistors with reduced base-collector junction capacitance

Semiconductor fins on a trench isolation region in a bulk semiconductor substrate and a method of forming the semiconductor fins

Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology

Bipolar junction transistors with reduced base-collector junction capacitance

Collector-up bipolar junction transistors in BiCMOS technology

Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases

Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

Method for epitaxial bipolar BiCMOS

Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base

Extrinsic base doping for bipolar junction transistors

Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology

Bipolar junction transistor with a self-aligned emitter and base

Complementary transistor structure and method for manufacture

Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology

Extrinsic base doping for bipolar junction transistors

Method of forming a bipolar transistor with maskless self-aligned emitter

PNP bipolar junction transistor fabrication using selective epitaxy

Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure

Self-aligned bipolar junction transistors

Structure and method for performance improvement in vertical bipolar transistors

Structure for performance improvement in vertical bipolar transistors

Optimized reachthrough implant for simultaneously forming an MOS capacitor

GLOBALFOUNDRIES INC

Profile control over a collector of a bipolar junction transistor

Self-aligned emitter-base bipolar junction transistor with reduced base resistance and base-collector capacitance

Bipolar junction transistors with a combined vertical-lateral architecture

Implementing stress in a bipolar junction transistor

Profile control over a collector of a bipolar junction transistor

Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thickness

Bipolar transistor with extrinsic base region and methods of fabrication

ADKISSON JAMES W

Transistor having a monocrystalline center section and a polycrystalline outer section, and narrow in-substrate collector region for reduced base-collector junction capacitance

Bipolar transistor with a raised collector pedestal for reduced capacitance

Bipolar transistor with a collector having a protected outer edge portion for reduced based-collector junction capacitance and a method of forming the transistor

CAMILLO-CASTILLO RENATA

Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases

Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the structure

HARAME DAVID L

Methods of manufacturing integrated semiconductor devices with single crystalline beam

CHAN KEVIN K

Self-aligned emitter-base in advanced BiCMOS technology