Inventor
MA QINLI
US11 patents
⚠️ This page may combine multiple inventors who share the name “MA QINLI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HEFECHIP CORPORATION LTD
6 patentsUS11456411B2Sep 27, 2022
Method for fabricating magnetic tunneling junction element with a composite capping layer
HEFECHIP CORPORATION LTD2 citations72
US11114605B2Sep 7, 2021
Composite storage layer for magnetic random access memory devices
HEFECHIP CORPORATION LTD3 citations72
US12108684B2Oct 1, 2024
Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same
HEFECHIP CORPORATION LTD0 citations62
US11538986B2Dec 27, 2022
Asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory device
HEFECHIP CORPORATION LTD0 citations62
US11342496B2May 24, 2022
Semiconductor memory structure with magnetic tunneling junction stack and method for forming the same
HEFECHIP CORPORATION LTD0 citations61
US11763972B2Sep 19, 2023
Magnetic tunnel junction element with a robust reference layer
HEFECHIP CORPORATION LTD0 citations51
UNIV JOHNS HOPKINS
2 patentsUS10559747B1Feb 11, 2020
Topological insulator-based high efficiency switching of magnetic unit, method and applications
UNIV JOHNS HOPKINS5 citations70
US9899071B2Feb 20, 2018
Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications
UNIV JOHNS HOPKINS3 citations70