Inventor

LIU QIZHI

US197 patents

⚠️ This page may combine multiple inventors who share the name “LIU QIZHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIU QIZHI

IBM

Semiconductor structure with airgap

Silicon waveguide on bulk silicon substrate and methods of forming

Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

BICMOS technology on SIMOX wafers

Low resistance and inductance backside through vias and methods of fabricating same

Low resistance and inductance backside through vias and methods of fabricating same

Bipolar transistor structure with self-aligned raised extrinsic base and methods

Bipolar transistor structure with self-aligned raised extrinsic base and methods

Method of base formation in a BiCMOS process

BiCMOS technology on SOI substrates

Method to fabricate high-performance NPN transistors in a BiCMOS process

Self-aligned raised extrinsic base bipolar transistor structure and method

Method to fabricate high-performance NPN transistors in a BiCMOS process

Tunable breakdown voltage RF FET devices

Semiconductor structure with airgap

Semiconductor structure with airgap

Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator

Bipolar junction transistors with reduced base-collector junction capacitance

Semiconductor fins on a trench isolation region in a bulk semiconductor substrate and a method of forming the semiconductor fins

Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology

Integrated circuit structure with bulk silicon FinFET and methods of forming

Bipolar junction transistors with reduced base-collector junction capacitance

Collector-up bipolar junction transistors in BiCMOS technology

Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases

Structures including means for lateral current carrying capability improvement in semiconductor devices

Method to build self-aligned NPN in advanced BiCMOS technology

BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices

Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

Method of collector formation in BiCMOS technology

Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming

Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming

In-line depth measurement for thru silicon via

Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions

Microbolometer devices in CMOS and BiCMOS technologies

Methods of base formation in a BiCMOS process

Method to build self-aligned NPN in advanced BiCMOS technology

High performance integrated vertical transistors and method of making the same

Method of base formation in a BiCMOS process

Semiconductor structure with airgap

GLOBALFOUNDRIES INC

Fabrication of integrated circuit structures for bipolor transistors

Self-aligned emitter-base bipolar junction transistor with reduced base resistance and base-collector capacitance

Lateral PiN diodes and schottky diodes

GLOBALFOUNDRIES US INC

Optical antenna with reflective material for photonic integrated circuit and methods to form same

Heterojunction bipolar transistor

Heterojunction bipolar transistors with airgap isolation

CONEXANT SYSTEMS INC

Method for dual damascene process using electron beam and ion implantation cure methods for low dielectric constant materials

ADKISSON JAMES W

Transistor having a monocrystalline center section and a polycrystalline outer section, and narrow in-substrate collector region for reduced base-collector junction capacitance

DING HANYI

Micro-electro-mechanical system (MEMS) capacitive OHMIC switch and design structures

CAMILLO-CASTILLO RENATA

Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases

HARAME DAVID LOUIS

Tunable semiconductor device