Inventor
SINGH KANWALJIT
NL35 patents
⚠️ This page may combine multiple inventors who share the name “SINGH KANWALJIT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
34 patentsUS10803396B2Oct 13, 2020
Quantum circuit assemblies with Josephson junctions utilizing resistive switching materials
INTEL CORP8 citations84
US11063138B2Jul 13, 2021
Quantum dot devices
INTEL CORP8 citations82
US11721723B2Aug 8, 2023
Quantum dot devices
INTEL CORP4 citations73
US11482614B2Oct 25, 2022
Quantum dot devices
INTEL CORP2 citations73
US11417765B2Aug 16, 2022
Quantum dot devices with fine-pitched gates
INTEL CORP2 citations73
US11335778B2May 17, 2022
Quantum dot devices with overlapping gates
INTEL CORP3 citations73
US11107908B2Aug 31, 2021
Transistors with metal source and drain contacts including a Heusler alloy
INTEL CORP5 citations73
US11107891B2Aug 31, 2021
Hexagonal arrays for quantum dot devices
INTEL CORP4 citations73
US10910488B2Feb 2, 2021
Quantum dot devices with fins and partially wrapped gates
INTEL CORP3 citations73
US10847705B2Nov 24, 2020
Reducing crosstalk from flux bias lines in qubit devices
INTEL CORP6 citations73
US10763347B2Sep 1, 2020
Quantum well stacks for quantum dot devices
INTEL CORP6 citations73
US10686007B2Jun 16, 2020
Quantum circuit assemblies with at least partially buried transmission lines and capacitors
INTEL CORP2 citations73
US10490727B2Nov 26, 2019
Gate arrangements in quantum dot devices
INTEL CORP2 citations73
US10475912B2Nov 12, 2019
Gate arrangements in quantum dot devices
INTEL CORP3 citations73
US10388848B2Aug 20, 2019
Donor- or acceptor-based spin qubits with isotopically purified materials
INTEL CORP2 citations73
US10347834B2Jul 9, 2019
Wafer-scale integration of vacancy centers for spin qubits
INTEL CORP5 citations73
US11158731B2Oct 26, 2021
Quantum well stacks for quantum dot devices
INTEL CORP3 citations72
US11721748B2Aug 8, 2023
Quantum dot devices
INTEL CORP2 citations71
US11038021B2Jun 15, 2021
Quantum dot devices
INTEL CORP2 citations71
US11942516B2Mar 26, 2024
Quantum dot devices with overlapping gates
INTEL CORP0 citations62
US11721724B2Aug 8, 2023
Quantum well stacks for quantum dot devices
INTEL CORP1 citations62
US11699747B2Jul 11, 2023
Quantum dot devices with multiple layers of gate metal
INTEL CORP1 citations62
US11677017B2Jun 13, 2023
Quantum well stacks for quantum dot devices
INTEL CORP0 citations62
US11557630B2Jan 17, 2023
Quantum dot devices with selectors
INTEL CORP0 citations62
US11450765B2Sep 20, 2022
Quantum dot devices with diodes for electrostatic discharge protection
INTEL CORP0 citations62
US11417755B2Aug 16, 2022
Differentially strained quantum dot devices
INTEL CORP0 citations62
US11355623B2Jun 7, 2022
Wafer-scale integration of dopant atoms for donor- or acceptor-based spin qubits
INTEL CORP0 citations62
US11183564B2Nov 23, 2021
Quantum dot devices with strain control
INTEL CORP1 citations62
US11114530B2Sep 7, 2021
Quantum well stacks for quantum dot devices
INTEL CORP0 citations62
US10714604B2Jul 14, 2020
Quantum dot devices with multiple dielectrics around fins
INTEL CORP1 citations62
US10665770B2May 26, 2020
Fin strain in quantum dot devices
INTEL CORP1 citations62
US10361353B2Jul 23, 2019
Sidewall metal spacers for forming metal gates in quantum devices
INTEL CORP1 citations62
US11721725B2Aug 8, 2023
Quantum dot devices
INTEL CORP0 citations61
US11322591B2May 3, 2022
Quantum dot devices
INTEL CORP1 citations61