Inventor

GUO DECHAO

US234 patents

⚠️ This page may combine multiple inventors who share the name “GUO DECHAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GUO DECHAO

IBM

Forming wrap-around silicide contact on finFET

Stacked field effect transistors with reduced coupling effect

Leakage control for gate-all-around field-effect transistor devices

Cutting fins and gates in CMOS devices

Forming wrap-around silicide contact on finFET

Forming a sacrificial liner for dual channel devices

Self-aligned spacer for cut-last transistor fabrication

Strained finFET with an electrically isolated channel

Threshold voltage modulation through channel length adjustment

Graphene sensor

Replacement metal gate scheme with self-alignment gate for vertical field effect transistors

Stacked field effect transistor with wrap-around contacts

Forming a sacrificial liner for dual channel devices

FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation

Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices

Threshold voltage modulation through channel length adjustment

FinFET having controlled dielectric region height

Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction

Strained finFET with an electrically isolated channel

FinFET structure and method to adjust threshold voltage in a FinFET structure

Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels

Replacement gate electrode with planar work function material layers

Non-volatile graphene nanomechanical switch

Non-volatile graphene nanomechanical switch

Method to optimize work function in complementary metal oxide semiconductor (CMOS) structures

GUO DECHAO

Deposition on a nanowire using atomic layer deposition

Method to fabricate a vertical transistor having an asymmetric gate with two conductive layers having different work functions

Replacement metal gate method

Graphene sensor

Continuously scalable width and height semiconductor fins

Vertical transistor having an asymmetric gate

Multiple threshold voltages in field effect transistor devices

FETs with hybrid channel materials

Replacement gate electrode with planar work function material layers

Structure and process for metal fill in replacement metal gate integration

Carbon implant for workfunction adjustment in replacement gate transistor

Self-aligned carbon electronics with embedded gate electrode

Field effect transistor device and fabrication

CAI MING

Fin field effect transistor with variable channel thickness for threshold voltage tuning

Integration of SMT in replacement gate FINFET process flow

Structure and method to form passive devices in ETSOI process flow

Embedded stressors for multigate transistor devices

finFET with fully silicided gate

Tensile stress enhancement of nitride film for stressed channel field effect transistor fabrication

CAO QING

Transistor employing vertically stacked self-aligned carbon nanotubes

Transistor employing vertically stacked self-aligned carbon nanotubes

YUAN JUN

Self-aligned contact combined with a replacement metal gate/high-K gate dielectric

WONG KEITH KWONG HON

Integrated circuit with replacement metal gates and dual dielectrics

FRANK MARTIN M

Controlling threshold voltage in carbon based field effect transistors

BRYANT ANDRES

FinFET structure having fully silicided fin