Inventor
BEAN JOHN C
US15 patents
⚠️ This page may combine multiple inventors who share the name “BEAN JOHN C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AT & T BELL LAB
9 patentsUS5091767AFeb 25, 1992
Article comprising a lattice-mismatched semiconductor heterostructure
AT & T BELL LAB193 citations96
US4529455AJul 16, 1985
Method for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy
AT & T BELL LAB60 citations95
US5244749ASep 14, 1993
Article comprising an epitaxial multilayer mirror
AT & T BELL LAB35 citations91
US4554045ANov 19, 1985
Method for producing metal silicide-silicon heterostructures
AT & T BELL LAB31 citations91
US4492971AJan 8, 1985
Metal silicide-silicon heterostructures
AT & T BELL LAB34 citations91
US5134090AJul 28, 1992
Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy
AT & T BELL LAB23 citations89
US4514748AApr 30, 1985
Germanium p-i-n photodetector on silicon substrate
AT & T BELL LAB21 citations82
US4879256ANov 7, 1989
Method of controlling the order-disorder state in a semiconductor device
AT & T BELL LAB14 citations72
US5096840AMar 17, 1992
Method of making a polysilicon emitter bipolar transistor
AT & T BELL LAB4 citations61
AMERICAN TELEPHONE & TELEGRAPH
4 patentsUS4681773AJul 21, 1987
Apparatus for simultaneous molecular beam deposition on a plurality of substrates
AMERICAN TELEPHONE & TELEGRAPH94 citations95
US4861393AAug 29, 1989
Semiconductor heterostructures having Gex Si1-x layers on Si utilizing molecular beam epitaxy
AMERICAN TELEPHONE & TELEGRAPH24 citations92
US4725870AFeb 16, 1988
Silicon germanium photodetector
AMERICAN TELEPHONE & TELEGRAPH13 citations73
US4661829AApr 28, 1987
Device using ordered semiconductor alloy
AMERICAN TELEPHONE & TELEGRAPH15 citations72