Inventor

FELDMAN LEONARD C

US15 patents

⚠️ This page may combine multiple inventors who share the name “FELDMAN LEONARD C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AT & T BELL LAB

5 patents

US5308796AMay 3, 1994

Fabrication of electronic devices by electroless plating of copper onto a metal silicide

AT & T BELL LAB76 citations95

US5068868ANov 26, 1991

Vertical cavity surface emitting lasers with electrically conducting mirrors

AT & T BELL LAB83 citations95

US4529455AJul 16, 1985

Method for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy

AT & T BELL LAB60 citations95

US5249195ASep 28, 1993

Erbium doped optical devices

AT & T BELL LAB76 citations94

US5334306AAug 2, 1994

Metallized paths on diamond surfaces

AT & T BELL LAB36 citations90

UNIV AUBURN

3 patents

US6939756B1Sep 6, 2005

Inclusion of nitrogen at the silicon dioxide-silicon carbide interace for passivation of interface defects

UNIV AUBURN36 citations91

US7235438B2Jun 26, 2007

Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects

UNIV AUBURN5 citations70

US9362367B2Jun 7, 2016

Semiconductor devices including polar insulation layer capped by non-polar insulation layer

UNIV AUBURN0 citations47

AT & T CORP

2 patents

US5532510AJul 2, 1996

Reverse side etching for producing layers with strain variation

AT & T CORP12 citations72

US5500391AMar 19, 1996

Method for making a semiconductor device including diffusion control

AT & T CORP9 citations71

AMERICAN TELEPHONE & TELEGRAPH

1 patent

US4861393AAug 29, 1989

Semiconductor heterostructures having Gex Si1-x layers on Si utilizing molecular beam epitaxy

AMERICAN TELEPHONE & TELEGRAPH24 citations92

BELL TELEPHONE LABOR INC

1 patent

US4393311AJul 12, 1983

Method and apparatus for surface characterization and process control utilizing radiation from desorbed particles

BELL TELEPHONE LABOR INC53 citations91

WILLIAMS JOHN R

1 patent

US9117817B2Aug 25, 2015

Semiconductor devices including polar insulation layer capped by non-polar insulation layer

WILLIAMS JOHN R4 citations68

UNIV VANDERBILT

1 patent

US7727340B2Jun 1, 2010

Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects

UNIV VANDERBILT4 citations56

UNIV RUTGERS

1 patent

US11248904B2Feb 15, 2022

Systems and methods for real time measurement of surface curvature and thermal expansion of small samples

UNIV RUTGERS0 citations44