Inventor
NAHAS JOSEPH J
US39 patents
⚠️ This page may combine multiple inventors who share the name “NAHAS JOSEPH J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
15 patentsUS6944052B2Sep 13, 2005
Magnetoresistive random access memory (MRAM) cell having a diode with asymmetrical characteristics
FREESCALE SEMICONDUCTOR INC104 citations98
US7370260B2May 6, 2008
MRAM having error correction code circuitry and method therefor
FREESCALE SEMICONDUCTOR INC26 citations92
US6909631B2Jun 21, 2005
MRAM and methods for reading the MRAM
FREESCALE SEMICONDUCTOR INC47 citations92
US6903964B2Jun 7, 2005
MRAM architecture with electrically isolated read and write circuitry
FREESCALE SEMICONDUCTOR INC27 citations92
US6760266B2Jul 6, 2004
Sense amplifier and method for performing a read operation in a MRAM
FREESCALE SEMICONDUCTOR INC28 citations92
US7082389B2Jul 25, 2006
Method and apparatus for simulating a magnetoresistive random access memory (MRAM)
FREESCALE SEMICONDUCTOR INC11 citations84
US7012841B1Mar 14, 2006
Circuit and method for current pulse compensation
FREESCALE SEMICONDUCTOR INC15 citations84
US6888743B2May 3, 2005
MRAM architecture
FREESCALE SEMICONDUCTOR INC15 citations84
US7206223B1Apr 17, 2007
MRAM memory with residual write field reset
FREESCALE SEMICONDUCTOR INC10 citations80
US6859388B1Feb 22, 2005
Circuit for write field disturbance cancellation in an MRAM and method of operation
FREESCALE SEMICONDUCTOR INC7 citations74
US6842365B1Jan 11, 2005
Write driver for a magnetoresistive memory
FREESCALE SEMICONDUCTOR INC9 citations73
US7266486B2Sep 4, 2007
Magnetoresistive random access memory simulation
FREESCALE SEMICONDUCTOR INC4 citations63
US6894937B2May 17, 2005
Accelerated life test of MRAM cells
FREESCALE SEMICONDUCTOR INC6 citations63
US7292484B1Nov 6, 2007
Sense amplifier with multiple bits sharing a common reference
FREESCALE SEMICONDUCTOR INC5 citations62
US7154772B2Dec 26, 2006
MRAM architecture with electrically isolated read and write circuitry
FREESCALE SEMICONDUCTOR INC1 citations52
MOTOROLA INC
14 patentsUS6700814B1Mar 2, 2004
Sense amplifier bias circuit for a memory having at least two distinct resistance states
MOTOROLA INC244 citations99
US6600690B1Jul 29, 2003
Sense amplifier for a memory having at least two distinct resistance states
MOTOROLA INC91 citations98
US6714442B1Mar 30, 2004
MRAM architecture with a grounded write bit line and electrically isolated read bit line
MOTOROLA INC37 citations92
US6711068B2Mar 23, 2004
Balanced load memory and method of operation
MOTOROLA INC38 citations92
US6711052B2Mar 23, 2004
Memory having a precharge circuit and method therefor
MOTOROLA INC26 citations92
US6693824B2Feb 17, 2004
Circuit and method of writing a toggle memory
MOTOROLA INC23 citations92
US6667899B1Dec 23, 2003
Magnetic memory and method of bi-directional write current programming
MOTOROLA INC35 citations92
US6657889B1Dec 2, 2003
Memory having write current ramp rate control
MOTOROLA INC46 citations92
US6621729B1Sep 16, 2003
Sense amplifier incorporating a symmetric midpoint reference
MOTOROLA INC41 citations92
US6538940B1Mar 25, 2003
Method and circuitry for identifying weak bits in an MRAM
MOTOROLA INC22 citations92
US5614816AMar 25, 1997
Low voltage reference circuit and method of operation
MOTOROLA INC34 citations92
US6714440B2Mar 30, 2004
Memory architecture with write circuitry and method therefor
MOTOROLA INC19 citations84
US6744663B2Jun 1, 2004
Circuit and method for reading a toggle memory cell
MOTOROLA INC19 citations83
US6580298B1Jun 17, 2003
Three input sense amplifier and method of operation
MOTOROLA INC8 citations74