P

Inventor

SAKAO MASATO

JP20 patents
⚠️ This page may combine multiple inventors who share the name “SAKAO MASATO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

19 patents
US5940702AAug 17, 1999

Method for forming a cylindrical stacked capacitor in a semiconductor device

NEC CORP58 citations96
US5798544AAug 25, 1998

Semiconductor memory device having trench isolation regions and bit lines formed thereover

NEC CORP105 citations96
US5084419AJan 28, 1992

Method of manufacturing semiconductor device using chemical-mechanical polishing

NEC CORP61 citations96
US6483194B2Nov 19, 2002

Semiconductor device having capacitor and method thereof

NEC CORP21 citations92
US6031262AFeb 29, 2000

Semiconductor memory device having capacitor-over-bitline cell with multiple cylindrical storage electrode offset from node contact and process of fabrication thereof

NEC CORP25 citations92
US5759889AJun 2, 1998

Method for manufacturing semiconductor device incorporating DRAM section and logic circuit section

NEC CORP37 citations92
US5698467ADec 16, 1997

Method of manufacturing an insulation layer having a flat surface

NEC CORP20 citations92
US5508222AApr 16, 1996

Fabrication process for semiconductor device

NEC CORP40 citations92
US6350647B2Feb 26, 2002

Semiconductor memory device and manufacturing method of the same

NEC CORP14 citations84
US6184584B1Feb 6, 2001

Miniaturized contact in semiconductor substrate and method for forming the same

NEC CORP18 citations84
US6387752B1May 14, 2002

Semiconductor memory device and method of fabricating the same

NEC CORP7 citations73
US6229170B1May 8, 2001

Semiconductor memory cell

NEC CORP8 citations73
US5728616AMar 17, 1998

Method of making a semiconductor memory device with improved capacitor

NEC CORP13 citations73
US5652446AJul 29, 1997

Semiconductor memory device with improved capacitor

NEC CORP8 citations73
US5463236AOct 31, 1995

Semiconductor memory device having improved isolation structure among memory cells

NEC CORP17 citations73
US5466964ANov 14, 1995

Semiconductor device capable of increasing reliability

NEC CORP14 citations72
US6166425ADec 26, 2000

Semiconductor device having a resistance element with a reduced area

NEC CORP4 citations62
US5548157AAug 20, 1996

Semiconductor device capable of increasing reliability

NEC CORP4 citations61
US6022773AFeb 8, 2000

Method of making a semiconductor device

NEC CORP0 citations52

NEC ELECTRONICS CORP

1 patent