Inventor

SELCUK ASIM A

US16 patents

⚠️ This page may combine multiple inventors who share the name “SELCUK ASIM A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

15 patents

US5981995ANov 9, 1999

Static random access memory cell having buried sidewall transistors, buried bit lines, and buried vdd and vss nodes

ADVANCED MICRO DEVICES INC56 citations96

US4650544AMar 17, 1987

Shallow groove capacitor fabrication method

ADVANCED MICRO DEVICES INC70 citations96

US6130470AOct 10, 2000

Static random access memory cell having buried sidewall capacitors between storage nodes

ADVANCED MICRO DEVICES INC31 citations92

US6051881AApr 18, 2000

Forming local interconnects in integrated circuits

ADVANCED MICRO DEVICES INC32 citations92

US5879980AMar 9, 1999

Method of making static random access memory cell having a trench field plate for increased capacitance

ADVANCED MICRO DEVICES INC28 citations92

US5796651AAug 18, 1998

Memory device using a reduced word line voltage during read operations and a method of accessing such a memory device

ADVANCED MICRO DEVICES INC25 citations92

US5793671AAug 11, 1998

Static random access memory cell utilizing enhancement mode N-channel transistors as load elements

ADVANCED MICRO DEVICES INC32 citations92

US4905065AFeb 27, 1990

High density dram trench capacitor isolation employing double epitaxial layers

ADVANCED MICRO DEVICES INC32 citations92

US6146954ANov 14, 2000

Minimizing transistor size in integrated circuits

ADVANCED MICRO DEVICES INC18 citations84

US6046088AApr 4, 2000

Method for self-aligning polysilicon gates with field isolation and the resultant structure

ADVANCED MICRO DEVICES INC19 citations84

US5844836ADec 1, 1998

Memory cell having increased capacitance via a local interconnect to gate capacitor and a method for making such a cell

ADVANCED MICRO DEVICES INC17 citations83

US6191034B1Feb 20, 2001

ADVANCED MICRODEVICES INC

1 patent

US5930659AJul 27, 1999

Forming minimal size spaces in integrated circuit conductive lines

ADVANCED MICRODEVICES INC6 citations73

SELCUK ASIM A

ADVANCED MICRO DEVICES INC

Static random access memory cell having buried sidewall transistors, buried bit lines, and buried vdd and vss nodes

Shallow groove capacitor fabrication method

Static random access memory cell having buried sidewall capacitors between storage nodes

Forming local interconnects in integrated circuits

Method of making static random access memory cell having a trench field plate for increased capacitance

Memory device using a reduced word line voltage during read operations and a method of accessing such a memory device

Static random access memory cell utilizing enhancement mode N-channel transistors as load elements

High density dram trench capacitor isolation employing double epitaxial layers

Minimizing transistor size in integrated circuits

Method for self-aligning polysilicon gates with field isolation and the resultant structure

Memory cell having increased capacitance via a local interconnect to gate capacitor and a method for making such a cell

Forming minimal size spaces in integrated circuit conductive lines

Minimizing transistor size in integrated circuits

Minimizing transistor size in integrated circuits

Memory cell for storing at least three logic states

ADVANCED MICRODEVICES INC

Forming minimal size spaces in integrated circuit conductive lines