Inventor
KIM BYONG-MAN
KR17 patents
⚠️ This page may combine multiple inventors who share the name “KIM BYONG-MAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
15 patentsUS6597036B1Jul 22, 2003
Multi-value single electron memory using double-quantum dot and driving method thereof
SAMSUNG ELECTRONICS CO LTD57 citations96
US6946346B2Sep 20, 2005
Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage element
SAMSUNG ELECTRONICS CO LTD20 citations92
US6867999B2Mar 15, 2005
Memory device including a transistor having functions of RAM and ROM
SAMSUNG ELECTRONICS CO LTD26 citations92
US6740925B2May 25, 2004
Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations92
US6670670B2Dec 30, 2003
Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD28 citations92
US6268273B1Jul 31, 2001
Fabrication method of single electron tunneling device
SAMSUNG ELECTRONICS CO LTD24 citations89
US6313503B1Nov 6, 2001
MNOS-type memory using single electron transistor and driving method thereof
SAMSUNG ELECTRONICS CO LTD28 citations87
US7020064B2Mar 28, 2006
Rewritable data storage using carbonaceous material and writing/reading method thereof
SAMSUNG ELECTRONICS CO LTD17 citations83
US7407856B2Aug 5, 2008
Method of manufacturing a memory device
SAMSUNG ELECTRONICS CO LTD4 citations74
US6479365B2Nov 12, 2002
Single electron transistor using porous silicon and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD13 citations73
US6414333B1Jul 2, 2002
Single electron transistor using porous silicon
SAMSUNG ELECTRONICS CO LTD9 citations73
US6388268B1May 14, 2002
Semiconducting YBCO device and superconducting YBCO device locally converted by AFM tip and manufacturing methods therefor
SAMSUNG ELECTRONICS CO LTD11 citations73
US6999346B2Feb 14, 2006
Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations63
US6687210B2Feb 3, 2004
High-density information storage apparatus using electron emission and methods of writing, reading and erasing information using the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US6664123B2Dec 16, 2003
Method for etching metal layer on a scale of nanometers
SAMSUNG ELECTRONICS CO LTD3 citations62