Inventor
SHIAU WEI-TSUN
TW20 patents
⚠️ This page may combine multiple inventors who share the name “SHIAU WEI-TSUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
18 patentsUS6888181B1May 3, 2005
Triple gate device having strained-silicon channel
UNITED MICROELECTRONICS CORP117 citations98
US6855588B1Feb 15, 2005
Method of fabricating a double gate MOSFET device
UNITED MICROELECTRONICS CORP92 citations98
US7491615B2Feb 17, 2009
Method of fabricating strained-silicon transistors and strained-silicon CMOS transistors
UNITED MICROELECTRONICS CORP54 citations96
US6853031B2Feb 8, 2005
Structure of a trapezoid-triple-gate FET
UNITED MICROELECTRONICS CORP41 citations92
US7462542B2Dec 9, 2008
Method of fabricating semiconductor devices and method of adjusting lattice distance in device channel
UNITED MICROELECTRONICS CORP12 citations84
US7288828B2Oct 30, 2007
Metal oxide semiconductor transistor device
UNITED MICROELECTRONICS CORP11 citations82
US7256464B2Aug 14, 2007
Metal oxide semiconductor transistor and fabrication method thereof
UNITED MICROELECTRONICS CORP7 citations74
US7423321B2Sep 9, 2008
Double gate MOSFET device
UNITED MICROELECTRONICS CORP2 citations63
US7338910B2Mar 4, 2008
Method of fabricating semiconductor devices and method of removing a spacer
UNITED MICROELECTRONICS CORP6 citations63
US7326622B2Feb 5, 2008
Method of manufacturing semiconductor MOS transistor device
UNITED MICROELECTRONICS CORP4 citations63
US7326617B2Feb 5, 2008
Method of fabricating a three-dimensional multi-gate device
UNITED MICROELECTRONICS CORP3 citations63
US7319063B2Jan 15, 2008
Fin field effect transistor and method for manufacturing fin field effect transistor
UNITED MICROELECTRONICS CORP2 citations63
US7135365B2Nov 14, 2006
Method of manufacturing MOS transistors
UNITED MICROELECTRONICS CORP5 citations62
US7145208B2Dec 5, 2006
MOS transistor having a work-function-dominating layer
UNITED MICROELECTRONICS CORP2 citations60
US7186657B2Mar 6, 2007
Method for patterning HfO2-containing dielectric
UNITED MICROELECTRONICS CORP6 citations59
US7589385B2Sep 15, 2009
Semiconductor CMOS transistors and method of manufacturing the same
UNITED MICROELECTRONICS CORP4 citations58
US7544621B2Jun 9, 2009
Method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process and etching method
UNITED MICROELECTRONICS CORP5 citations58
US7338898B2Mar 4, 2008
MOS transistor and fabrication thereof
UNITED MICROELECTRONICS CORP1 citations49