P

Inventor

SHIAU WEI-TSUN

TW20 patents
⚠️ This page may combine multiple inventors who share the name “SHIAU WEI-TSUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

18 patents
US6888181B1May 3, 2005

Triple gate device having strained-silicon channel

UNITED MICROELECTRONICS CORP117 citations98
US6855588B1Feb 15, 2005

Method of fabricating a double gate MOSFET device

UNITED MICROELECTRONICS CORP92 citations98
US7491615B2Feb 17, 2009

Method of fabricating strained-silicon transistors and strained-silicon CMOS transistors

UNITED MICROELECTRONICS CORP54 citations96
US6853031B2Feb 8, 2005

Structure of a trapezoid-triple-gate FET

UNITED MICROELECTRONICS CORP41 citations92
US7462542B2Dec 9, 2008

Method of fabricating semiconductor devices and method of adjusting lattice distance in device channel

UNITED MICROELECTRONICS CORP12 citations84
US7288828B2Oct 30, 2007

Metal oxide semiconductor transistor device

UNITED MICROELECTRONICS CORP11 citations82
US7256464B2Aug 14, 2007

Metal oxide semiconductor transistor and fabrication method thereof

UNITED MICROELECTRONICS CORP7 citations74
US7423321B2Sep 9, 2008

Double gate MOSFET device

UNITED MICROELECTRONICS CORP2 citations63
US7338910B2Mar 4, 2008

Method of fabricating semiconductor devices and method of removing a spacer

UNITED MICROELECTRONICS CORP6 citations63
US7326622B2Feb 5, 2008

Method of manufacturing semiconductor MOS transistor device

UNITED MICROELECTRONICS CORP4 citations63
US7326617B2Feb 5, 2008

Method of fabricating a three-dimensional multi-gate device

UNITED MICROELECTRONICS CORP3 citations63
US7319063B2Jan 15, 2008

Fin field effect transistor and method for manufacturing fin field effect transistor

UNITED MICROELECTRONICS CORP2 citations63
US7135365B2Nov 14, 2006

Method of manufacturing MOS transistors

UNITED MICROELECTRONICS CORP5 citations62
US7145208B2Dec 5, 2006

MOS transistor having a work-function-dominating layer

UNITED MICROELECTRONICS CORP2 citations60
US7186657B2Mar 6, 2007

Method for patterning HfO2-containing dielectric

UNITED MICROELECTRONICS CORP6 citations59
US7589385B2Sep 15, 2009

Semiconductor CMOS transistors and method of manufacturing the same

UNITED MICROELECTRONICS CORP4 citations58
US7544621B2Jun 9, 2009

Method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process and etching method

UNITED MICROELECTRONICS CORP5 citations58
US7338898B2Mar 4, 2008

MOS transistor and fabrication thereof

UNITED MICROELECTRONICS CORP1 citations49

TEXAS INSTRUMENTS INC

2 patents