Inventor
CAUBET PIERRE
FR16 patents
⚠️ This page may combine multiple inventors who share the name “CAUBET PIERRE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SA
8 patentsUS7601636B2Oct 13, 2009
Implementation of a metal barrier in an integrated electronic circuit
ST MICROELECTRONICS SA53 citations91
US7851915B2Dec 14, 2010
Electronic component comprising a titanium carbonitride (TiCN) barrier layer and process of making the same
ST MICROELECTRONICS SA6 citations65
US8013284B2Sep 6, 2011
Integrated electrooptic system
ST MICROELECTRONICS SA2 citations59
US7667173B2Feb 23, 2010
Integrated electrooptic system
ST MICROELECTRONICS SA3 citations59
US7531447B2May 12, 2009
Process for forming integrated circuit comprising copper lines
ST MICROELECTRONICS SA0 citations48
US8018062B2Sep 13, 2011
Production of a self-aligned CuSiN barrier
ST MICROELECTRONICS SA0 citations47
US7687399B2Mar 30, 2010
Production of a self-aligned CuSiN barrier
ST MICROELECTRONICS SA1 citations47
US8053871B2Nov 8, 2011
Implementation of a metal barrier in an integrated electronic circuit
ST MICROELECTRONICS SA0 citations46
ST MICROELECTRONICS CROLLES 2 SAS
5 patentsUS9691871B1Jun 27, 2017
Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride
ST MICROELECTRONICS CROLLES 2 SAS5 citations76
US9536599B1Jan 3, 2017
Optoelectronic device, in particular memory device
ST MICROELECTRONICS CROLLES 2 SAS0 citations50
US9530489B2Dec 27, 2016
Optoelectronic device, in particular memory device
ST MICROELECTRONICS CROLLES 2 SAS0 citations50
US9953837B2Apr 24, 2018
Transistor having a gate comprising a titanium nitride layer and method for depositing this layer
ST MICROELECTRONICS CROLLES 2 SAS0 citations48
US10211059B2Feb 19, 2019
Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride
ST MICROELECTRONICS CROLLES 2 SAS0 citations45
ST MICROELECTRONICS CROLLES 2
2 patentsUS9257518B2Feb 9, 2016
Method for producing a metal-gate MOS transistor, in particular a PMOS transistor, and corresponding integrated circuit
ST MICROELECTRONICS CROLLES 22 citations59
US9029254B2May 12, 2015
Method for depositing a low-diffusion TiAlN layer and insulated gate comprising such a layer
ST MICROELECTRONICS CROLLES 21 citations48